Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

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DOI

  • Lanzhong Hao, China University of Petroleum (East China)
  • ,
  • Yongjun Du, China University of Petroleum (East China)
  • ,
  • Zegao Wang, Sichuan University, Sino-Danish Center for Education and Research
  • ,
  • Yupeng Wu, China University of Petroleum (East China)
  • ,
  • Hanyang Xu, China University of Petroleum (East China)
  • ,
  • Shichang Dong, China University of Petroleum (East China)
  • ,
  • Hui Liu, China University of Petroleum (East China)
  • ,
  • Yunjie Liu, China University of Petroleum (East China)
  • ,
  • Qingzhong Xue, China University of Petroleum (East China)
  • ,
  • Zhide Han, China University of Petroleum (East China)
  • ,
  • Keyou Yan, South China University of Technology
  • ,
  • Mingdong Dong

Due to its excellent electrical and optical properties, tin selenide (SnSe), a typical candidate of two-dimensional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remains a great challenge, which limits their practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization were deposited via a scalable magnetron sputtering method. The results showed that the SnSe photodetector was highly sensitive to a broad range of wavelengths in the UV-visible-NIR range, especially showing an extremely high responsivity of 277.3 A W-1 with the corresponding external quantum efficiency of 8.5 × 104% and detectivity of 7.6 × 1011 Jones. These figures of merits are among the best performances for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of localized defects are discussed in detail. The results indicate that the few-layered SnSe films obtained from sputtering growth have great potential in the design of high-performance photodetector arrays.

Original languageEnglish
JournalNanoscale
Volume12
Issue13
Pages (from-to)7358-7365
Number of pages8
ISSN2040-3364
DOIs
Publication statusPublished - Apr 2020

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