Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties

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  • Binjie Zheng, University of Electronic Science and Technology of China
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  • Yuanfu Chen, University of Electronic Science and Technology of China
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  • Zegao Wang
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  • Fei Qi, University of Electronic Science and Technology of China
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  • Zhishuo Huang, University of Electronic Science and Technology of China
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  • Xin Hao, Southwest Institute of Technical Physics
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  • Pingjian Li, University of Electronic Science and Technology of China
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  • Wanli Zhang, University of Electronic Science and Technology of China
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  • Yanrong Li, University of Electronic Science and Technology of China

For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-HfS2) nanosheets have been grown by chemical vapor deposition. The individual HfS2 nanosheets are well [001] oriented, with highly crystalline quality. Far different from conventional van der Waals epitaxial growth mechanism for two-dimensional transition metal dichalcogenides, a novel dangling-bond-assisted self-seeding growth mechanism is proposed to describe the growth of V-HfS2 nanosheets: difficult migration of HfS2 adatoms on substrate surface results in HfS2 seeds growing perpendicularly to the substrate; V-HfS2 nanosheets inherit the growth direction of HfS2 seeds; V-HfS2 nanosheets further expand in the in-plane direction with time evolution. Moreover, the V-HfS2 nanosheets show strong and broadened photons absorption from near infrared to ultraviolet; the V-HfS2-based photodetector exhibits an ultrafast photoresponse time of 24 ms, and a high photosensitivity ca. 10(3) for 405 nmlaser.

Original languageEnglish
Article number035024
Journal2D materials
Volume3
Issue3
Number of pages9
ISSN2053-1583
DOIs
Publication statusPublished - Sep 2016

    Research areas

  • two-dimensional semiconductor, chemical vapor deposition, hafnium disulfide, vertically oriented, photoresponse, CHEMICAL-VAPOR-DEPOSITION, HIGH-QUALITY MONOLAYER, MOS2 NANOSHEETS, ALIGNED LAYERS, ZRS2, SUBSTRATE, FILMS, WSE2, PHOTODETECTORS, DICHALCOGENIDE

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