Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

N. Volet*, E. Kapon

*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

8 Citations (Scopus)

Abstract

Measuring the turn-on delay of diode lasers provides useful information on carrier recombination dynamics, particularly Auger recombination, essential for their design for high-speed modulation and power-efficient performance. Here we present a rigorous, comprehensive relationship between the time delay and the Auger recombination coefficient. We demonstrate the application of this formulation by extracting this coefficient for AlGaInAs/InP quantum wells incorporated in long-wavelength vertical-cavity surface-emitting lasers.

Original languageEnglish
Article number131102
JournalApplied Physics Letters
Volume97
Issue13
ISSN0003-6951
DOIs
Publication statusPublished - 27 Sept 2010
Externally publishedYes

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