Tunable Voltage-Mode Subthreshold CMOS Neuron

Research output: Contribution to book/anthology/report/proceeding › Article in proceedings › Research › peer-review

15 Citations (Scopus)

Abstract

Original language	English
Title of host publication	Proceedings - 2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
Number of pages	6
Publisher	IEEE
Publication date	2020
Pages	252-257
Article number	9155044
ISBN (Electronic)	9781728157757
DOIs	https://doi.org/10.1109/ISVLSI49217.2020.00053
Publication status	Published - 2020
Event	2020 IEEE Computer Society Annual Symposium on VLSI - GrandResort, Limassol, Cyprus Duration: 6 Jul 2020 → 8 Jul 2020 http://www.isvlsi.org/

Conference	2020 IEEE Computer Society Annual Symposium on VLSI
Location	GrandResort
Country/Territory	Cyprus
City	Limassol
Period	06/07/2020 → 08/07/2020
Internet address	http://www.isvlsi.org/

@inproceedings{188eebb7c8c54b10abde7b17c2cf47be,

title = "Tunable Voltage-Mode Subthreshold CMOS Neuron",

author = "Margherita Ronchini and Milad Zamani and Hooman Farkhani and Farshad Moradi",

year = "2020",

doi = "10.1109/ISVLSI49217.2020.00053",

language = "English",

pages = "252--257",

booktitle = "Proceedings - 2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)",

publisher = "IEEE",

note = "2020 IEEE Computer Society Annual Symposium on VLSI ; Conference date: 06-07-2020 Through 08-07-2020",

url = "http://www.isvlsi.org/",

}

TY - GEN

T1 - Tunable Voltage-Mode Subthreshold CMOS Neuron

AU - Ronchini, Margherita

AU - Zamani, Milad

AU - Farkhani, Hooman

AU - Moradi, Farshad

PY - 2020

Y1 - 2020

U2 - 10.1109/ISVLSI49217.2020.00053

DO - 10.1109/ISVLSI49217.2020.00053

M3 - Article in proceedings

SP - 252

EP - 257

BT - Proceedings - 2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

PB - IEEE

T2 - 2020 IEEE Computer Society Annual Symposium on VLSI

Y2 - 6 July 2020 through 8 July 2020

ER -