Tl2Hg3Q4 (Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • Simon Johnsen, Denmark
  • Sebastian C. Peter, Northwestern University, United States
  • Sandy L. Nguyen, Northwestern University, United States
  • Jung-Hwan Song, Dept. of Physics and Astronomy, Northwestern University, Evanston, Illinois, United States
  • Hosub Jin, Dept. of Physics and Astronomy, Northwestern University, Evanston, Illinois, United States
  • Arthur J. Freeman, Northwestern University, United States
  • Mercouri G. Kanatzidis, Dept. of Physics and Astronomy, Northwestern University, Evanston, Illinois, United States
Original languageEnglish
JournalChemistry of Materials
Volume23
Issue19
Pages (from-to)4375-4383
ISSN0897-4756
DOIs
Publication statusPublished - 16 Sep 2011

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