Tin-based donors in SiSn alloys

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Tin-based donors in SiSn alloys. / Scheffler, L.; Roesgaard, S.; Hansen, J. L.; Nylandsted Larsen, A.; Julsgaard, B.

In: Journal of Applied Physics, Vol. 126, No. 3, 035702, 07.2019.

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Scheffler, L. ; Roesgaard, S. ; Hansen, J. L. ; Nylandsted Larsen, A. ; Julsgaard, B. / Tin-based donors in SiSn alloys. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 3.

Bibtex

@article{091d8759d8dc4383aa4d8eb867338ab6,
title = "Tin-based donors in SiSn alloys",
abstract = "Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.",
author = "L. Scheffler and S. Roesgaard and Hansen, {J. L.} and {Nylandsted Larsen}, A. and B. Julsgaard",
year = "2019",
month = "7",
doi = "10.1063/1.5099415",
language = "English",
volume = "126",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "3",

}

RIS

TY - JOUR

T1 - Tin-based donors in SiSn alloys

AU - Scheffler, L.

AU - Roesgaard, S.

AU - Hansen, J. L.

AU - Nylandsted Larsen, A.

AU - Julsgaard, B.

PY - 2019/7

Y1 - 2019/7

N2 - Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

AB - Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

UR - http://www.scopus.com/inward/record.url?scp=85069539566&partnerID=8YFLogxK

U2 - 10.1063/1.5099415

DO - 10.1063/1.5099415

M3 - Journal article

AN - SCOPUS:85069539566

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 035702

ER -