Tin-based donors in SiSn alloys

L. Scheffler; S. Roesgaard; J. L. Hansen; A. Nylandsted Larsen; B. Julsgaard

doi:10.1063/1.5099415

Tin-based donors in SiSn alloys

L. Scheffler^*, S. Roesgaard, J. L. Hansen, A. Nylandsted Larsen, B. Julsgaard

^*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

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Abstract

Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

Original language	English
Article number	035702
Journal	Journal of Applied Physics
Volume	126
Issue	3
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.5099415
Publication status	Published - Jul 2019

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Tin-based donors in SiSn alloysFinal published version, 1.58 MBLicence: Other

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title = "Tin-based donors in SiSn alloys",

abstract = "Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.",

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T1 - Tin-based donors in SiSn alloys

AU - Scheffler, L.

AU - Roesgaard, S.

AU - Hansen, J. L.

AU - Nylandsted Larsen, A.

AU - Julsgaard, B.

PY - 2019/7

Y1 - 2019/7

N2 - Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

AB - Tin-containing Group IV alloys show great promise for a number of next-generation CMOS-compatible devices. Not least of those are optoelectronic devices such as lasers and light-emitting diodes. To obtain reliable operation, a high control over the doping in such materials is needed at all stages of device processing. In this paper, we report tin-based donors in silicon, which appear after heat treatment of a silicon-tin alloy at temperatures between 650 °C and 900 °C. Two stages of the donor are observed, called SD I and SD II, which are formed subsequently. A broad long-lifetime infrared photoluminescence is also observed during the first stages of donor formation. We discuss evolving tin clusters as the origin of both the observed donors and the photoluminescence, in analogy to the oxygen-based thermal donors in silicon and germanium.

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DO - 10.1063/1.5099415

M3 - Journal article

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Tin-based donors in SiSn alloys

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