The occupied electronic structure of ultrathin boron doped diamond

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Standard

The occupied electronic structure of ultrathin boron doped diamond. / Pakpour-Tabrizi, A. C.; Schenk, A. K.; Holt, A. J.U.; Mahatha, S. K.; Arnold, F.; Bianchi, M.; Jackman, R. B.; Butler, J. E.; Vikharev, A.; Miwa, J. A.; Hofmann, P.; Cooil, S. P.; Wells, J. W.; Mazzola, F.

In: Nanoscale Advances, Vol. 2, No. 3, 2020, p. 1358-1364.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Harvard

Pakpour-Tabrizi, AC, Schenk, AK, Holt, AJU, Mahatha, SK, Arnold, F, Bianchi, M, Jackman, RB, Butler, JE, Vikharev, A, Miwa, JA , Hofmann, P, Cooil, SP, Wells, JW & Mazzola, F 2020, 'The occupied electronic structure of ultrathin boron doped diamond', Nanoscale Advances, vol. 2, no. 3, pp. 1358-1364. https://doi.org/10.1039/c9na00593e

APA

Pakpour-Tabrizi, A. C., Schenk, A. K., Holt, A. J. U., Mahatha, S. K., Arnold, F., Bianchi, M., Jackman, R. B., Butler, J. E., Vikharev, A., Miwa, J. A., Hofmann, P., Cooil, S. P., Wells, J. W., & Mazzola, F. (2020). The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances, 2(3), 1358-1364. https://doi.org/10.1039/c9na00593e

CBE

Pakpour-Tabrizi AC, Schenk AK, Holt AJU, Mahatha SK, Arnold F, Bianchi M, Jackman RB, Butler JE, Vikharev A, Miwa JA , Hofmann P, Cooil SP, Wells JW, Mazzola F. 2020. The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances. 2(3):1358-1364. https://doi.org/10.1039/c9na00593e

MLA

Pakpour-Tabrizi, A. C. et al. "The occupied electronic structure of ultrathin boron doped diamond". Nanoscale Advances. 2020, 2(3). 1358-1364. https://doi.org/10.1039/c9na00593e

Vancouver

Pakpour-Tabrizi AC, Schenk AK, Holt AJU, Mahatha SK, Arnold F, Bianchi M et al. The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances. 2020;2(3):1358-1364. https://doi.org/10.1039/c9na00593e

Author

Pakpour-Tabrizi, A. C. ; Schenk, A. K. ; Holt, A. J.U. ; Mahatha, S. K. ; Arnold, F. ; Bianchi, M. ; Jackman, R. B. ; Butler, J. E. ; Vikharev, A. ; Miwa, J. A. ; Hofmann, P. ; Cooil, S. P. ; Wells, J. W. ; Mazzola, F. / The occupied electronic structure of ultrathin boron doped diamond. In: Nanoscale Advances. 2020 ; Vol. 2, No. 3. pp. 1358-1364.

Bibtex

@article{e19c64c381a24294bea157365212504c,

title = "The occupied electronic structure of ultrathin boron doped diamond",

abstract = "Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.",

keywords = "ACCEPTOR, BANDS, CONFINEMENT, INTERFACES, SI, SUPERCONDUCTIVITY, SURFACE",

author = "Pakpour-Tabrizi, {A. C.} and Schenk, {A. K.} and Holt, {A. J.U.} and Mahatha, {S. K.} and F. Arnold and M. Bianchi and Jackman, {R. B.} and Butler, {J. E.} and A. Vikharev and Miwa, {J. A.} and P. Hofmann and Cooil, {S. P.} and Wells, {J. W.} and F. Mazzola",

year = "2020",

doi = "10.1039/c9na00593e",

language = "English",

volume = "2",

pages = "1358--1364",

journal = "Nanoscale Advances",

issn = "2516-0230",

publisher = "Royal Society of Chemistry",

number = "3",

}

RIS

TY - JOUR

T1 - The occupied electronic structure of ultrathin boron doped diamond

AU - Pakpour-Tabrizi, A. C.

AU - Schenk, A. K.

AU - Holt, A. J.U.

AU - Mahatha, S. K.

AU - Arnold, F.

AU - Bianchi, M.

AU - Jackman, R. B.

AU - Butler, J. E.

AU - Vikharev, A.

AU - Miwa, J. A.

AU - Hofmann, P.

AU - Cooil, S. P.

AU - Wells, J. W.

AU - Mazzola, F.

PY - 2020

Y1 - 2020

N2 - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

AB - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

KW - ACCEPTOR

KW - BANDS

KW - CONFINEMENT

KW - INTERFACES

KW - SI

KW - SUPERCONDUCTIVITY

KW - SURFACE

UR - http://www.scopus.com/inward/record.url?scp=85082108832&partnerID=8YFLogxK

U2 - 10.1039/c9na00593e

DO - 10.1039/c9na00593e

M3 - Journal article

AN - SCOPUS:85082108832

VL - 2

SP - 1358

EP - 1364

JO - Nanoscale Advances

JF - Nanoscale Advances

SN - 2516-0230

IS - 3

ER -