Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
The occupied electronic structure of ultrathin boron doped diamond. / Pakpour-Tabrizi, A. C.; Schenk, A. K.; Holt, A. J.U.; Mahatha, S. K.; Arnold, F.; Bianchi, M.; Jackman, R. B.; Butler, J. E.; Vikharev, A.; Miwa, J. A.; Hofmann, P.; Cooil, S. P.; Wells, J. W.; Mazzola, F.
In: Nanoscale Advances, Vol. 2, No. 3, 2020, p. 1358-1364.Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
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TY - JOUR
T1 - The occupied electronic structure of ultrathin boron doped diamond
AU - Pakpour-Tabrizi, A. C.
AU - Schenk, A. K.
AU - Holt, A. J.U.
AU - Mahatha, S. K.
AU - Arnold, F.
AU - Bianchi, M.
AU - Jackman, R. B.
AU - Butler, J. E.
AU - Vikharev, A.
AU - Miwa, J. A.
AU - Hofmann, P.
AU - Cooil, S. P.
AU - Wells, J. W.
AU - Mazzola, F.
PY - 2020
Y1 - 2020
N2 - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
AB - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
KW - ACCEPTOR
KW - BANDS
KW - CONFINEMENT
KW - INTERFACES
KW - SI
KW - SUPERCONDUCTIVITY
KW - SURFACE
UR - http://www.scopus.com/inward/record.url?scp=85082108832&partnerID=8YFLogxK
U2 - 10.1039/c9na00593e
DO - 10.1039/c9na00593e
M3 - Journal article
AN - SCOPUS:85082108832
VL - 2
SP - 1358
EP - 1364
JO - Nanoscale Advances
JF - Nanoscale Advances
SN - 2516-0230
IS - 3
ER -