The occupied electronic structure of ultrathin boron doped diamond

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  • A. C. Pakpour-Tabrizi, University College London
  • ,
  • A. K. Schenk, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • A. J.U. Holt
  • ,
  • S. K. Mahatha
  • ,
  • F. Arnold
  • ,
  • M. Bianchi
  • R. B. Jackman, London Centre for Nanotechnology, University College London
  • ,
  • J. E. Butler, Cubic Carbon Ceramics
  • ,
  • A. Vikharev, RAS - Institute of Applied Physics
  • ,
  • J. A. Miwa
  • P. Hofmann
  • S. P. Cooil, Norges teknisk-naturvitenskapelige universitet, Trondheim, Aberystwyth University
  • ,
  • J. W. Wells, Department of Physics, Norwegian University of Science and Technology(NTNU), Trondheim, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • F. Mazzola, Norges teknisk-naturvitenskapelige universitet, Trondheim

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

Original languageEnglish
JournalNanoscale Advances
Pages (from-to)1358-1364
Number of pages7
Publication statusPublished - 2020

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