The ambipolar transport behavior of WSe2 transistors and its analogue circuits

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The ambipolar transport behavior of WSe2 transistors and its analogue circuits. / Wang, Zegao; Li, Qiang; Chen, Yuanfu; Cui, Bianxiao; Li, Yanrong; Besenbacher, Flemming; Dong, Mingdong.

In: NPG Asia Materials, Vol. 10, 01.08.2018, p. 1-10.

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Wang, Zegao ; Li, Qiang ; Chen, Yuanfu ; Cui, Bianxiao ; Li, Yanrong ; Besenbacher, Flemming ; Dong, Mingdong. / The ambipolar transport behavior of WSe2 transistors and its analogue circuits. In: NPG Asia Materials. 2018 ; Vol. 10. pp. 1-10.

Bibtex

@article{8352e327f87b408ab86175366e3f788c,
title = "The ambipolar transport behavior of WSe2 transistors and its analogue circuits",
abstract = "Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate the digital and analog application of WSe2 in CMOS, it is essential to understand the underlying ambipolar hole and electron transport behavior. Herein, the electric field screening of WSe2 with a thickness range of 1–40 layers is systemically studied by electrostatic force microscopy in combination with non-linear Thomas–Fermi theory to interpret the experimental results. The ambipolar transport behavior of 1–40 layers of WSe2 transistors is systematically investigated with varied temperature from 300 to 5 K. The thickness-dependent transport properties (carrier mobility and Schottky barrier) are discussed. Furthermore, the surface potential of WSe2 as a function of gate voltage is performed under Kelvin probe force microscopy to directly investigate its ambipolar behavior. The results show that the Fermi level will upshift by 100 meV when WSe2 transmits from an insulator to an n-type semiconductor and downshift by 340 meV when WSe2 transmits from an insulator to a p-type semiconductor. Finally, the ambipolar WSe2 transistor-based analog circuit exhibits phase-control by gate voltage in an analog inverter, which demonstrates practical application in 2D communication electronics.",
author = "Zegao Wang and Qiang Li and Yuanfu Chen and Bianxiao Cui and Yanrong Li and Flemming Besenbacher and Mingdong Dong",
year = "2018",
month = "8",
day = "1",
doi = "10.1038/s41427-018-0062-1",
language = "English",
volume = "10",
pages = "1--10",
journal = "NPG Asia Materials",
issn = "1884-4049",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - The ambipolar transport behavior of WSe2 transistors and its analogue circuits

AU - Wang, Zegao

AU - Li, Qiang

AU - Chen, Yuanfu

AU - Cui, Bianxiao

AU - Li, Yanrong

AU - Besenbacher, Flemming

AU - Dong, Mingdong

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate the digital and analog application of WSe2 in CMOS, it is essential to understand the underlying ambipolar hole and electron transport behavior. Herein, the electric field screening of WSe2 with a thickness range of 1–40 layers is systemically studied by electrostatic force microscopy in combination with non-linear Thomas–Fermi theory to interpret the experimental results. The ambipolar transport behavior of 1–40 layers of WSe2 transistors is systematically investigated with varied temperature from 300 to 5 K. The thickness-dependent transport properties (carrier mobility and Schottky barrier) are discussed. Furthermore, the surface potential of WSe2 as a function of gate voltage is performed under Kelvin probe force microscopy to directly investigate its ambipolar behavior. The results show that the Fermi level will upshift by 100 meV when WSe2 transmits from an insulator to an n-type semiconductor and downshift by 340 meV when WSe2 transmits from an insulator to a p-type semiconductor. Finally, the ambipolar WSe2 transistor-based analog circuit exhibits phase-control by gate voltage in an analog inverter, which demonstrates practical application in 2D communication electronics.

AB - Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate the digital and analog application of WSe2 in CMOS, it is essential to understand the underlying ambipolar hole and electron transport behavior. Herein, the electric field screening of WSe2 with a thickness range of 1–40 layers is systemically studied by electrostatic force microscopy in combination with non-linear Thomas–Fermi theory to interpret the experimental results. The ambipolar transport behavior of 1–40 layers of WSe2 transistors is systematically investigated with varied temperature from 300 to 5 K. The thickness-dependent transport properties (carrier mobility and Schottky barrier) are discussed. Furthermore, the surface potential of WSe2 as a function of gate voltage is performed under Kelvin probe force microscopy to directly investigate its ambipolar behavior. The results show that the Fermi level will upshift by 100 meV when WSe2 transmits from an insulator to an n-type semiconductor and downshift by 340 meV when WSe2 transmits from an insulator to a p-type semiconductor. Finally, the ambipolar WSe2 transistor-based analog circuit exhibits phase-control by gate voltage in an analog inverter, which demonstrates practical application in 2D communication electronics.

U2 - 10.1038/s41427-018-0062-1

DO - 10.1038/s41427-018-0062-1

M3 - Journal article

AN - SCOPUS:85052296556

VL - 10

SP - 1

EP - 10

JO - NPG Asia Materials

JF - NPG Asia Materials

SN - 1884-4049

ER -