Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation

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DOI

  • S.G. Carter, University of California - Santa Barbara, United States
  • Ciulin
  • M.S. Sherwin, University of California - Santa Barbara, United States
  • M. Hanson, University of California - Santa Barbara, United States
  • A. Huntington, University of California - Santa Barbara, United States
  • L.A. Coldren, University of California - Santa Barbara, United States
  • A.C. Gossard, University of California - Santa Barbara, United States

A 4-mum-thick sample containing 50 GaAs/AlGaAs asymmetric coupled quantum wells was driven with a strong terahertz (THz) electric field of frequency omega(THz) and probed with a near-infrared (NIR) laser of frequency omega(NIR). The THz beam modulated the probe to generate sidebands at omega(NIR)+nomega(THz), where n is an integer. Up to 0.2% of the NIR laser power was converted into the n=+1 sideband at 20 K, and sidebands were observed up to room temperature. The strong THz fields also induced changes in the NIR absorption of the sample. (C) 2004 American Institute of Physics.

Original languageEnglish
JournalApplied Physics Letters
Volume84
Issue6
Pages (from-to)840-842
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2004
Externally publishedYes

    Research areas

  • SIDE-BAND GENERATION, CONVERTER, LASER

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