Synthesis of Ge1-xSnx nanoparticles under non-inert conditions

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Abstract

Ge_{1-x}Sn_{x} nanoparticles are interesting for a variety of different optoelectronic devices, however, the synthesis normally involves highly inert conditions, making it less available and promising for future industry implementation. Here, a new non-inert synthesis route is presented which involves preparation of the synthesis under ambient conditions followed by a reaction in autoclaves at temperatures between 400 °C and 500 °C and pressures between 52 bar and 290 bar. The product formation is also investigated with in situ powder X-ray diffraction (PXRD) to study the effect of the reaction parameters in more detail, e.g. showing that the Sn-precursor catalyzes the reaction. The synthesized phase pure Ge_{1-x}Sn_{x} nanoparticles have Sn concentrations ranging from 0 to ∼4% and crystallite sizes ranging from approximately 11 nm to 25 nm. If the Sn-precursor concentration is increased further, β-Sn is formed as an impurity phase accompanied by an increase in the size of the Ge_{1-x}Sn_{x} particles, making sizes of up to about 55 nm available.

Original languageEnglish
JournalDalton Transactions
Volume51
Issue45
Pages (from-to)17488-17495
Number of pages8
ISSN1477-9226
DOIs
Publication statusPublished - Dec 2022

Keywords

  • Nanoparticles
  • Semiconductors
  • Nanocrystals
  • GESN ALLOYS
  • Autoclave synthesis
  • in situ X-ray diffraction
  • Powder X-ray diffraction
  • Solvothermal synthesis
  • Chemistry
  • Nanoscience
  • ALLOY NANOPARTICLES
  • Germanium
  • supercritical synthesis

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