TY - JOUR

T1 - Synthesis of Ge1-xSnx nanoparticles under non-inert conditions

AU - Søgaard, Nicolaj Brink

AU - Bondesgaard, Martin

AU - Bertelsen, Andreas Dueholm

AU - Iversen, Bo Brummerstedt

AU - Julsgaard, Brian

PY - 2022/12

Y1 - 2022/12

N2 - Ge_{1-x}Sn_{x} nanoparticles are interesting for a variety of different optoelectronic devices, however, the synthesis normally involves highly inert conditions, making it less available and promising for future industry implementation. Here, a new non-inert synthesis route is presented which involves preparation of the synthesis under ambient conditions followed by a reaction in autoclaves at temperatures between 400 °C and 500 °C and pressures between 52 bar and 290 bar. The product formation is also investigated with in situ powder X-ray diffraction (PXRD) to study the effect of the reaction parameters in more detail, e.g. showing that the Sn-precursor catalyzes the reaction. The synthesized phase pure Ge_{1-x}Sn_{x} nanoparticles have Sn concentrations ranging from 0 to ∼4% and crystallite sizes ranging from approximately 11 nm to 25 nm. If the Sn-precursor concentration is increased further, β-Sn is formed as an impurity phase accompanied by an increase in the size of the Ge_{1-x}Sn_{x} particles, making sizes of up to about 55 nm available.

AB - Ge_{1-x}Sn_{x} nanoparticles are interesting for a variety of different optoelectronic devices, however, the synthesis normally involves highly inert conditions, making it less available and promising for future industry implementation. Here, a new non-inert synthesis route is presented which involves preparation of the synthesis under ambient conditions followed by a reaction in autoclaves at temperatures between 400 °C and 500 °C and pressures between 52 bar and 290 bar. The product formation is also investigated with in situ powder X-ray diffraction (PXRD) to study the effect of the reaction parameters in more detail, e.g. showing that the Sn-precursor catalyzes the reaction. The synthesized phase pure Ge_{1-x}Sn_{x} nanoparticles have Sn concentrations ranging from 0 to ∼4% and crystallite sizes ranging from approximately 11 nm to 25 nm. If the Sn-precursor concentration is increased further, β-Sn is formed as an impurity phase accompanied by an increase in the size of the Ge_{1-x}Sn_{x} particles, making sizes of up to about 55 nm available.

KW - Nanoparticles

KW - Semiconductors

KW - Nanocrystals

KW - GESN ALLOYS

KW - Autoclave synthesis

KW - in situ X-ray diffraction

KW - Powder X-ray diffraction

KW - Solvothermal synthesis

KW - Chemistry

KW - Nanoscience

KW - ALLOY NANOPARTICLES

KW - Germanium

KW - supercritical synthesis

U2 - 10.1039/d2dt02739a

DO - 10.1039/d2dt02739a

M3 - Journal article

C2 - 36331388

VL - 51

SP - 17488

EP - 17495

JO - Dalton Transactions (Print Edition)

JF - Dalton Transactions (Print Edition)

SN - 1477-9226

IS - 45

ER -