Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface x-ray diffraction

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  • Diogo Duarte dos Reis, Universidade federal de minas gerais, Brazil
  • Lucas Barreto, Denmark
  • Marco Bianchi
  • Guilberme Almeida Silva Ribeiro, Universidade federal de minas gerais, Brazil
  • Edmar Avellar Soares, Universidade federal de minas gerais, Brazil
  • Wendell Simões e Silva, Universidade federal de minas gerais, Brazil
  • Vagner Eustáquio de Carvalho, Universidade federal de minas gerais, Brazil
  • Jonathan Rawle, Diamond Light Source Ltd, United Kingdom
  • Moritz Hoesch, Diamond Light Source Ltd, United Kingdom
  • Chris Nicklin, Diamond Light Source Ltd, United Kingdom
  • Willians Principe Fernandes, Universidade Federal de São Jõao Del-Rei, Brazil
  • Jianli Mi, Denmark
  • Bo Brummerstedt Iversen
  • Philip Hofmann
The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron
diffraction and surface x-ray diffraction at room temperature. Both approaches show that the crystal is terminated
by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface
relaxations obtained by both techniques are in good agreement with each other and found to be small. This
includes the relaxation of the van der Waals gap between the first two quintuple layers.
Original languageEnglish
Article number041404
JournalPhysical Review B
Volume88
Number of pages4
ISSN2469-9950
DOIs
Publication statusPublished - 2013

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