Substrate effects in graphene field-effect transistor photodetectors

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperConference articleResearchpeer-review

  • K. V. Voronin, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet
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  • G. A. Ermolaev, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet, Skolkovo Institute of Science and Technology
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  • Y. V. Stebunov, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet, Skolkovo Innovation Center
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  • A. V. Arsenin, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet, Skolkovo Innovation Center
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  • A. N. Bylinkin, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet
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  • B. B.E. Jensen
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  • B. Jørgensen, Newtec Engineering A/S
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  • V. S. Volkov, Moskovskij Fiziko-Tehniceskij Institut - Gosudarstvennyj Universitet, Skolkovo Innovation Center, University of Southern Denmark

In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.

Original languageEnglish
Article number012188
Book seriesJournal of Physics: Conference Series
Volume1461
ISSN1742-6588
DOIs
Publication statusPublished - Apr 2020
Event4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 - St. Petersburg, Russian Federation
Duration: 15 Jul 201919 Jul 2019

Conference

Conference4th International Conference on Metamaterials and Nanophotonics, METANANO 2019
CountryRussian Federation
CitySt. Petersburg
Period15/07/201919/07/2019
SponsorBruker, INSCIENCE

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