Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

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DOI

  • Soren Roesgaard
  • ,
  • Etienne Talbot, Normandie Univ, Centre National de la Recherche Scientifique (CNRS), Grp Phys Mat, CNRS, INSA Rouen,UNIROUEN
  • ,
  • Constantinos Hatzoglou, Normandie Univ, Centre National de la Recherche Scientifique (CNRS), Grp Phys Mat, CNRS, INSA Rouen,UNIROUEN
  • ,
  • John Lundsgaard Hansen
  • Brian Julsgaard

Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76-1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 degrees C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.

Original languageEnglish
Article number065005
JournalMaterials Research Express
Volume6
Issue6
Number of pages6
DOIs
Publication statusPublished - 6 Mar 2019

    Research areas

  • Sn-nanocrystals, atom probe tomography, photoluminescence, NANOSTRUCTURES

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