Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

Soren Roesgaard; Etienne Talbot; Constantinos Hatzoglou; John Lundsgaard Hansen; Brian Julsgaard

doi:10.1088/2053-1591/ab0948

Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

Soren Roesgaard, Etienne Talbot, Constantinos Hatzoglou, John Lundsgaard Hansen, Brian Julsgaard^*

^*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

1 Citation (Scopus)

Abstract

Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76-1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 degrees C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.

Original language	English
Article number	065005
Journal	Materials Research Express
Volume	6
Issue	6
Number of pages	6
DOIs	https://doi.org/10.1088/2053-1591/ab0948
Publication status	Published - 6 Mar 2019

Keywords

Sn-nanocrystals
atom probe tomography
photoluminescence
NANOSTRUCTURES

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10.1088/2053-1591/ab0948

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title = "Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography",

abstract = "Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76-1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 degrees C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.",

keywords = "Sn-nanocrystals, atom probe tomography, photoluminescence, NANOSTRUCTURES",

author = "Soren Roesgaard and Etienne Talbot and Constantinos Hatzoglou and Hansen, {John Lundsgaard} and Brian Julsgaard",

year = "2019",

month = mar,

day = "6",

doi = "10.1088/2053-1591/ab0948",

language = "English",

volume = "6",

journal = "Materials Research Express",

issn = "2053-1591",

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Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography. / Roesgaard, Soren; Talbot, Etienne; Hatzoglou, Constantinos et al.
In: Materials Research Express, Vol. 6, No. 6, 065005, 06.03.2019.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

AU - Roesgaard, Soren

AU - Talbot, Etienne

AU - Hatzoglou, Constantinos

AU - Hansen, John Lundsgaard

AU - Julsgaard, Brian

PY - 2019/3/6

Y1 - 2019/3/6

N2 - Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76-1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 degrees C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.

AB - Tin nanocrystals embedded in silicon are studied by atom probe tomography and by photoluminescence spectroscopy in the 0.76-1.07 eV region of emission energies. The nanocrystals have been fabricated by molecular beam epitaxy followed by a post-growth annealing step at various temperatures. One particular sample, annealed at a temperature of 725 degrees C, shows a distinctly higher optical activity. It is found, however, that the distinct behavior cannot be explained by variations in the nanocrystal composition or in the properties of Sn atoms dissolved in the surrounding Si matrix, which can be investigated by atom probe tomography.

KW - Sn-nanocrystals

KW - atom probe tomography

KW - photoluminescence

KW - NANOSTRUCTURES

U2 - 10.1088/2053-1591/ab0948

DO - 10.1088/2053-1591/ab0948

M3 - Journal article

SN - 2053-1591

VL - 6

JO - Materials Research Express

JF - Materials Research Express

IS - 6

M1 - 065005

ER -

Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

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Keywords

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