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Structural and electronic inhomogeneity of superconducting Nb-doped Bi2Se3. / Kevy, Simone M.; Lund, Henriette E.; Wollesen, Laura et al.
In: Physical Review B, Vol. 103, No. 8, 085107, 02.2021.Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
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TY - JOUR
T1 - Structural and electronic inhomogeneity of superconducting Nb-doped Bi2Se3
AU - Kevy, Simone M.
AU - Lund, Henriette E.
AU - Wollesen, Laura
AU - Dalgaard, Kirstine J.
AU - Hsu, Yu Te
AU - Wiedmann, Steffen
AU - Bianchi, Marco
AU - Holt, Ann Julie Utne
AU - Curcio, Davide
AU - Biswas, Deepnarayan
AU - Jones, Alfred J.H.
AU - Volckaert, Klara
AU - Cacho, Cephise
AU - Dudin, Pavel
AU - Hofmann, Philip
AU - Bremholm, Martin
N1 - Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2
Y1 - 2021/2
N2 - The crystal structure, electronic structure, and transport properties of crystals with the nominal composition Nb0.25Bi2Se3 are investigated. X-ray diffraction reveals that the as-grown crystals display phase segregation and contain major contributions of BiSe and the superconducting misfit layer compound (BiSe)1.1NbSe2. The inhomogeneous character of the samples is also reflected in the electronic structure and transport properties of different single crystals. Angle-resolved photoemission spectroscopy (ARPES) reveals an electronic structure that resembles poor-quality Bi2Se3 with an ill-defined topological surface state. High-quality topological surface states are instead observed when using a highly focused beam size, i.e., nanoARPES. While the superconducting transition temperature is found to vary between 2.5 and 3.5 K, the majority of the bulk single crystals does not exhibit a zero-resistance state suggesting filamentary superconductivity in the materials. Susceptibility measurements of the system together with the temperature dependence of the coherence length extracted from the upper critical field are consistent with conventional BCS superconductivity of a type II superconductor.
AB - The crystal structure, electronic structure, and transport properties of crystals with the nominal composition Nb0.25Bi2Se3 are investigated. X-ray diffraction reveals that the as-grown crystals display phase segregation and contain major contributions of BiSe and the superconducting misfit layer compound (BiSe)1.1NbSe2. The inhomogeneous character of the samples is also reflected in the electronic structure and transport properties of different single crystals. Angle-resolved photoemission spectroscopy (ARPES) reveals an electronic structure that resembles poor-quality Bi2Se3 with an ill-defined topological surface state. High-quality topological surface states are instead observed when using a highly focused beam size, i.e., nanoARPES. While the superconducting transition temperature is found to vary between 2.5 and 3.5 K, the majority of the bulk single crystals does not exhibit a zero-resistance state suggesting filamentary superconductivity in the materials. Susceptibility measurements of the system together with the temperature dependence of the coherence length extracted from the upper critical field are consistent with conventional BCS superconductivity of a type II superconductor.
UR - http://www.scopus.com/inward/record.url?scp=85101906347&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.103.085107
DO - 10.1103/PhysRevB.103.085107
M3 - Journal article
AN - SCOPUS:85101906347
VL - 103
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 8
M1 - 085107
ER -