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Spin cast self-assembled monolayer field effect transistors

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  • Daniel O. Hutchins, University of Washington
  • ,
  • Orb Acton, University of Washington
  • ,
  • Tobias Weidner
  • Nathan Cernetic, University of Washington
  • ,
  • Joe E. Baio, University of Washington
  • ,
  • Guy Ting, University of Washington
  • ,
  • David G. Castner, University of Washington
  • ,
  • Hong Ma, University of Washington
  • ,
  • Alex K Y Jen, University of Washington

Top-contact self-assembled monolayer field-effect transistors (SAMFETs) were fabricated through both spin-coating and solution assembly of a semiconducting phosphonic acid-based molecule (11-(5-butyl-[2,2′;5′, 2″;5″,2‴;5‴,2]quinquethiophen-5-yl)undecylphosphonic acid) (BQT-PA). The field-effect mobilities of both spin-cast and solution assembled SAMFETs were 1.1-8.0 × 10 -6 cm 2 V -1 s -1 for a wide range of channel lengths (between 12 and 80 μm). The molecular monolayers were characterized by atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It was found that the BQT-PA monolayer films exhibit dense surface coverage, bidentate binding, and tilt angles of ∼32°and ∼44°for the thiophene rings and alkyl chain, respectively. These results indicate that rapid throughput of fabricating SAMFETs is possible even by spin-coating.

Original languageEnglish
JournalOrganic Electronics: physics, materials, applications
Pages (from-to)464-468
Number of pages5
Publication statusPublished - Mar 2012
Externally publishedYes

    Research areas

  • Organic field effect transistor (OFET), Self assembled monolayer field effect transistor (SAMFET), Spin cast

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