Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Emanuel-Petre Eni*, Szymon Beczkowski, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu, Raghavendra Rao Juluri, Brian Julsgaard, Edward VanBrunt, Brett Hull, Shadi Sabri, David Grider, Christian Uhrenfeldt

*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Abstract

The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC MOSFET is investigated at 6 kV dc-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its lifetime. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation shows that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.

Original languageEnglish
Article number7833196
JournalIEEE Transactions on Power Electronics
Volume32
Issue12
Pages (from-to)9342-9354
Number of pages13
ISSN0885-8993
DOIs
Publication statusPublished - Dec 2017

Keywords

  • Degradation
  • high voltage
  • short circuit
  • SiC MOSFET
  • POWER MOSFETS
  • SILICON-CARBIDE
  • PERFORMANCE
  • RELIABILITY
  • ROBUSTNESS
  • DEVICES
  • TECHNOLOGY

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