Abstract
InGaP integrated on a silicon substrate has emerged as a promising platform for nonlinear and quantum photonics, offering high nonlinear conversion efficiency and scalability with silicon-based fabrication infrastructure. This work presents an experimental demonstration of sum- and difference-frequency generation (DFG) in InGaP waveguides. We generate light at 930 nm, 1550 nm, and 2325 nm, achieving conversion efficiencies of 4.5 ± 0.5 W−1, 1.4 ± 0.2 W−1, and 0.43 ± 0.04 W−1, respectively. These results highlight the potential of InGaP-on-insulator for advanced photonic applications, including broadband infrared light generation and quantum-frequency conversion. We discuss a roadmap for this technology to achieve even broader wavelength coverage, higher efficiencies, and quantum-frequency conversion of single photons.
Original language | English |
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Journal | Optics Letters |
Volume | 50 |
Issue | 11 |
Pages (from-to) | 3652-3655 |
Number of pages | 4 |
ISSN | 0146-9592 |
DOIs | |
Publication status | Published - 1 Jun 2025 |
Keywords
- Nonlinear Optics
- InGaP-on-insulator
- Photonics
- Second-harmonic generation (SHG)
- Sum-frequency generation (SFG)
- Difference-frequency generation (DFG)