Robust subthreshold 7T-SRAM cell for low-power applications

Farshad Moradi; Jens K. Madsen

doi:10.1109/MWSCAS.2014.6908559

Robust subthreshold 7T-SRAM cell for low-power applications

^*Corresponding author for this work

Aarhus University

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Conference article › Research › peer-review

8 Citations (Scopus)

Original language	English
Article number	6908559
Journal	Midwest Symposium on Circuits and Systems. Conference Proceedings
Pages (from-to)	893-896
Number of pages	4
ISSN	1548-3746
DOIs	https://doi.org/10.1109/MWSCAS.2014.6908559
Publication status	Published - 23 Sept 2014
Event	IEEE 57th International Midwest Symposium on Circuits and Systems - College Station, Texas, College Station, Texas, United States Duration: 3 Aug 2014 → 6 Aug 2014

Conference

Conference	IEEE 57th International Midwest Symposium on Circuits and Systems
Location	College Station, Texas
Country/Territory	United States
City	College Station, Texas
Period	03/08/2014 → 06/08/2014

Keywords

CMOS
Read Static Noise Margin
SRAM
Write Margin

Access to Document

10.1109/MWSCAS.2014.6908559

http://www.scopus.com/inward/record.url?scp=84908474654&partnerID=8YFLogxK

Cite this

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title = "Robust subthreshold 7T-SRAM cell for low-power applications",

keywords = "CMOS, Read Static Noise Margin, SRAM, Write Margin",

author = "Farshad Moradi and Madsen, {Jens K.}",

note = "ISBN: 978-1-4799-4134-6; IEEE 57th International Midwest Symposium on Circuits and Systems, MWSCAS 2014 ; Conference date: 03-08-2014 Through 06-08-2014",

year = "2014",

month = sep,

day = "23",

doi = "10.1109/MWSCAS.2014.6908559",

language = "English",

pages = "893--896",

journal = "Midwest Symposium on Circuits and Systems. Conference Proceedings",

issn = "1548-3746",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Robust subthreshold 7T-SRAM cell for low-power applications

AU - Moradi, Farshad

AU - Madsen, Jens K.

N1 - ISBN: 978-1-4799-4134-6

PY - 2014/9/23

Y1 - 2014/9/23

KW - CMOS

KW - Read Static Noise Margin

KW - SRAM

KW - Write Margin

U2 - 10.1109/MWSCAS.2014.6908559

DO - 10.1109/MWSCAS.2014.6908559

M3 - Conference article

AN - SCOPUS:84908474654

SN - 1548-3746

SP - 893

EP - 896

JO - Midwest Symposium on Circuits and Systems. Conference Proceedings

JF - Midwest Symposium on Circuits and Systems. Conference Proceedings

M1 - 6908559

T2 - IEEE 57th International Midwest Symposium on Circuits and Systems

Y2 - 3 August 2014 through 6 August 2014

ER -