Regulating Surficial Catalysis Mechanism of Copper Metal by Manipulating Reactive Intermediate for Growth of Homogenous Bernal-Stacked Bilayer Graphene

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DOI

  • Qian Yang
  • Baoshan Hu, Chongqing University
  • ,
  • Yan Jin, Chongqing University
  • ,
  • Zhengtang Luo, Hong Kong University of Science and Technology
  • ,
  • Flemming Besenbacher
  • Liang Fang, Chongqing University
  • ,
  • Lichun Dong, Chongqing University
  • ,
  • Mingdong Dong

Large scale and homogenous bernal-stacked bilayer (AB-stacked) graphene is a promising 2D functional material due to its distinct electronic properties. As motivated by some evidence, the continuous carbon radicals (e.g., ·CH3) can greatly contribute to the nucleation and growth of second layer graphene film; thus, overcoming the self-limited catalysis regime of metallic Cu surface by conventional chemical vapor deposition. Herein, a two-step reaction system is designed to facilitate more continuously supplying reactive intermediate for the second layer growth of graphene. With this strategy, monolayer and AB-stacked bilayer graphene films can be controllably grown by simply tuning the confined amount of predeposited amorphous carbon (α-C) under atmospheric pressure rather than low pressure or vacuum. This approach opens a straightforward way to grow 2D materials by managing the surficially catalytic kinetics in the two separated reaction units.

Original languageEnglish
Article number1700415
JournalAdvanced Materials Interfaces
Volume4
Issue17
ISSN2196-7350
DOIs
Publication statusPublished - 8 Sep 2017

    Research areas

  • AB-stacked bilayer graphene, Homogenous, Process matching, Thickness control, ·CH intermediates

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