Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity

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Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity. / Kang, Shifei; He, Maofen; Chen, Mengya; Wang, Zegao; Sun, Zhaozong; Dang, Haifeng; Chang, Xijiang; Dong, Mingdong; Liu, Ping; Cui, Lifeng.

In: Journal of Colloid and Interface Science, Vol. 556, 11.2019, p. 214-223.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

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Kang, S, He, M, Chen, M, Wang, Z, Sun, Z, Dang, H, Chang, X, Dong, M, Liu, P & Cui, L 2019, 'Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity', Journal of Colloid and Interface Science, vol. 556, pp. 214-223. https://doi.org/10.1016/j.jcis.2019.08.040

APA

Kang, S., He, M., Chen, M., Wang, Z., Sun, Z., Dang, H., Chang, X., Dong, M., Liu, P., & Cui, L. (2019). Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity. Journal of Colloid and Interface Science, 556, 214-223. https://doi.org/10.1016/j.jcis.2019.08.040

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Kang, Shifei ; He, Maofen ; Chen, Mengya ; Wang, Zegao ; Sun, Zhaozong ; Dang, Haifeng ; Chang, Xijiang ; Dong, Mingdong ; Liu, Ping ; Cui, Lifeng. / Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity. In: Journal of Colloid and Interface Science. 2019 ; Vol. 556. pp. 214-223.

Bibtex

@article{2021409085274f9c8fc402505be4733c,
title = "Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity",
abstract = "The optimization of the polymeric structure and the modulation of surface amino groups in graphitic carbon nitride (g-CN) are critical but challenging in improving the photoelectric and photocatalytic performances of this polymer semiconductor. Ammonia plasma treatment may provide a fast and useful approach to optimize g-CN materials yet is seriously restricted by the low ionization ability of ammonia. Herein, a confined fast and environmental-friendly ammonia plasma method based on argon-assisted high ionization of NH3 was developed for efficient modification of raw g-CN. Compared with the weakly-ionized pure ammonia plasma which can only introduce amino group onto the surface g-CN, the argon-assisted highly-ionized ammonia plasma treatment obviously contributes to the comprehensively polymeric structure optimization of g-CN, and thus plays a key role in enhancing its light-harvesting and decelerating the recombination of the photogenerated charge carriers. As a result, the argon-assisted highly-ionized ammonia plasma-treated g-CN-Ar+NH3 outperformed the raw g-CN by a 2.5-fold higher photocatalytic reduction of hexavalent chromium and a remarkable 3.8-fold higher photocatalytic H2 evolution activity (up to 957.8 μmol·h−1·g−1) under visible light irradiation. Our findings suggest the great prospects of this novel highly-ionized ammonia plasma treatment method in the controllable modification of semiconductors and polymers.",
keywords = "Ammonia plasma, Argon-assisted ionization, Graphitic carbon nitride, Polymeric structure optimization, Surface modification",
author = "Shifei Kang and Maofen He and Mengya Chen and Zegao Wang and Zhaozong Sun and Haifeng Dang and Xijiang Chang and Mingdong Dong and Ping Liu and Lifeng Cui",
year = "2019",
month = nov,
doi = "10.1016/j.jcis.2019.08.040",
language = "English",
volume = "556",
pages = "214--223",
journal = "Journal of Colloid and Interface Science",
issn = "0021-9797",
publisher = "Academic Press",

}

RIS

TY - JOUR

T1 - Polymeric structure optimization of g-C3N4 by using confined argon-assisted highly-ionized ammonia plasma for improved photocatalytic activity

AU - Kang, Shifei

AU - He, Maofen

AU - Chen, Mengya

AU - Wang, Zegao

AU - Sun, Zhaozong

AU - Dang, Haifeng

AU - Chang, Xijiang

AU - Dong, Mingdong

AU - Liu, Ping

AU - Cui, Lifeng

PY - 2019/11

Y1 - 2019/11

N2 - The optimization of the polymeric structure and the modulation of surface amino groups in graphitic carbon nitride (g-CN) are critical but challenging in improving the photoelectric and photocatalytic performances of this polymer semiconductor. Ammonia plasma treatment may provide a fast and useful approach to optimize g-CN materials yet is seriously restricted by the low ionization ability of ammonia. Herein, a confined fast and environmental-friendly ammonia plasma method based on argon-assisted high ionization of NH3 was developed for efficient modification of raw g-CN. Compared with the weakly-ionized pure ammonia plasma which can only introduce amino group onto the surface g-CN, the argon-assisted highly-ionized ammonia plasma treatment obviously contributes to the comprehensively polymeric structure optimization of g-CN, and thus plays a key role in enhancing its light-harvesting and decelerating the recombination of the photogenerated charge carriers. As a result, the argon-assisted highly-ionized ammonia plasma-treated g-CN-Ar+NH3 outperformed the raw g-CN by a 2.5-fold higher photocatalytic reduction of hexavalent chromium and a remarkable 3.8-fold higher photocatalytic H2 evolution activity (up to 957.8 μmol·h−1·g−1) under visible light irradiation. Our findings suggest the great prospects of this novel highly-ionized ammonia plasma treatment method in the controllable modification of semiconductors and polymers.

AB - The optimization of the polymeric structure and the modulation of surface amino groups in graphitic carbon nitride (g-CN) are critical but challenging in improving the photoelectric and photocatalytic performances of this polymer semiconductor. Ammonia plasma treatment may provide a fast and useful approach to optimize g-CN materials yet is seriously restricted by the low ionization ability of ammonia. Herein, a confined fast and environmental-friendly ammonia plasma method based on argon-assisted high ionization of NH3 was developed for efficient modification of raw g-CN. Compared with the weakly-ionized pure ammonia plasma which can only introduce amino group onto the surface g-CN, the argon-assisted highly-ionized ammonia plasma treatment obviously contributes to the comprehensively polymeric structure optimization of g-CN, and thus plays a key role in enhancing its light-harvesting and decelerating the recombination of the photogenerated charge carriers. As a result, the argon-assisted highly-ionized ammonia plasma-treated g-CN-Ar+NH3 outperformed the raw g-CN by a 2.5-fold higher photocatalytic reduction of hexavalent chromium and a remarkable 3.8-fold higher photocatalytic H2 evolution activity (up to 957.8 μmol·h−1·g−1) under visible light irradiation. Our findings suggest the great prospects of this novel highly-ionized ammonia plasma treatment method in the controllable modification of semiconductors and polymers.

KW - Ammonia plasma

KW - Argon-assisted ionization

KW - Graphitic carbon nitride

KW - Polymeric structure optimization

KW - Surface modification

UR - http://www.scopus.com/inward/record.url?scp=85070924342&partnerID=8YFLogxK

U2 - 10.1016/j.jcis.2019.08.040

DO - 10.1016/j.jcis.2019.08.040

M3 - Journal article

C2 - 31445449

AN - SCOPUS:85070924342

VL - 556

SP - 214

EP - 223

JO - Journal of Colloid and Interface Science

JF - Journal of Colloid and Interface Science

SN - 0021-9797

ER -