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Oscillatory behaviour in the nonlinear emission of semiconductor microcavities

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  • L. Vina, Universidad Autónoma de Madrid
  • ,
  • R. Andre, CEA-CNRS-Université Joseph Fourier Grenoble, Laboratoire de Spectrométrie Physique
  • ,
  • Victoria Birkedal
  • J.D. Ganiere, École Polytechnique Fédérale de Lausanne
  • ,
  • B. Deveaud, École Polytechnique Fédérale de Lausanne

We have observed marked oscillations in the time-resolved photoluminescence of a semiconductor microcavity under non-resonant excitation conditions. Hot excitons, created with an ultrashort light pulse, rapidly relax into polaritons in the cavity with a large in-plane momentum K. Shortly after illumination, above a certain excitation power, the polaritons accumulate into an energy trap at the bottom of the dispersion and the light emission, governed by final-state stimulated scattering, starts at K similar to 0 (0degrees with respect to the normal of the sample). The angular dependence of the photoluminescence at negative detunings reveals that the emission is rapidly transferred to K similar to 2 x 10(4) cm(-1) (similar to15degrees), close to the point of inflection of the lower polariton branch, giving rise to an annular emission. The oscillations arise from a macroscopic coherent population in the lower polariton branch.

Original languageEnglish
Article numberPII S0268-1242(04)71981-1
JournalSemiconductor Science and Technology
Pages (from-to)S333-S335
Number of pages3
Publication statusPublished - 2004
Externally publishedYes

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