Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe

Jacob Svane; Emilie Skytte Vosegaard; Magnus Kløve; Bo Brummerstedt Iversen

doi:10.1021/acs.cgd.4c00520

Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe

Jacob Svane, Emilie Skytte Vosegaard, Magnus Kløve, Bo Brummerstedt Iversen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Abstract

Investigations of crystal structures and intrinsic properties of advanced materials require synthesis of high-quality single crystals. In case of incongruently melting solids, specialized growth methods must be applied, but these can be particularly challenging for two-dimensional (2D) van der Waals materials prone to twinning and defects. Here, a very rare synthesis of a large single crystal of an incongruently melting van der Waals material is reported using the traveling solvent floating zone method in an optical mirror furnace. Use of a melt zone with a delicately balanced stoichiometry yielded a ∼3 × 1 cm³ single crystal of InSe, which is a widely studied flexible semiconductor. The average crystal structure of InSe determined from single crystal X-ray diffraction reveals stacking disorder along the c-axis, which can be modeled by a major- (∼75%) and minor component (∼25%). The In-In and In-Se bond lengths are 2.775(3) and 2.632(3) Å, respectively, while the In-In-Se and Se-In-Se angles are 118.5(1) and 99.1(2)°, respectively. The van der Waals interlayer distance was found to be 3.08(3) Å. The easy layer-slippage appears to govern the mechanical flexibility demonstrated macroscopically with a bending test on the single crystal.

Original language	English
Journal	Crystal Growth and Design
Volume	24
Issue	17
Pages (from-to)	6965-6971
Number of pages	7
ISSN	1528-7483
DOIs	https://doi.org/10.1021/acs.cgd.4c00520
Publication status	Published - 4 Sept 2024

Access to Document

10.1021/acs.cgd.4c00520

Cite this

@article{e8b1116491984053bfda77731ebfb88d,

title = "Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe",

abstract = "Investigations of crystal structures and intrinsic properties of advanced materials require synthesis of high-quality single crystals. In case of incongruently melting solids, specialized growth methods must be applied, but these can be particularly challenging for two-dimensional (2D) van der Waals materials prone to twinning and defects. Here, a very rare synthesis of a large single crystal of an incongruently melting van der Waals material is reported using the traveling solvent floating zone method in an optical mirror furnace. Use of a melt zone with a delicately balanced stoichiometry yielded a ∼3 × 1 cm3 single crystal of InSe, which is a widely studied flexible semiconductor. The average crystal structure of InSe determined from single crystal X-ray diffraction reveals stacking disorder along the c-axis, which can be modeled by a major- (∼75%) and minor component (∼25%). The In-In and In-Se bond lengths are 2.775(3) and 2.632(3) {\AA}, respectively, while the In-In-Se and Se-In-Se angles are 118.5(1) and 99.1(2)°, respectively. The van der Waals interlayer distance was found to be 3.08(3) {\AA}. The easy layer-slippage appears to govern the mechanical flexibility demonstrated macroscopically with a bending test on the single crystal.",

author = "Jacob Svane and Vosegaard, {Emilie Skytte} and Magnus Kl{\o}ve and Iversen, {Bo Brummerstedt}",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

month = sep,

day = "4",

doi = "10.1021/acs.cgd.4c00520",

language = "English",

volume = "24",

pages = "6965--6971",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "17",

}

Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe. / Svane, Jacob ; Vosegaard, Emilie Skytte ; Kløve, Magnus et al.
In: Crystal Growth and Design, Vol. 24, No. 17, 04.09.2024, p. 6965-6971.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe

AU - Svane, Jacob

AU - Vosegaard, Emilie Skytte

AU - Kløve, Magnus

AU - Iversen, Bo Brummerstedt

PY - 2024/9/4

Y1 - 2024/9/4

N2 - Investigations of crystal structures and intrinsic properties of advanced materials require synthesis of high-quality single crystals. In case of incongruently melting solids, specialized growth methods must be applied, but these can be particularly challenging for two-dimensional (2D) van der Waals materials prone to twinning and defects. Here, a very rare synthesis of a large single crystal of an incongruently melting van der Waals material is reported using the traveling solvent floating zone method in an optical mirror furnace. Use of a melt zone with a delicately balanced stoichiometry yielded a ∼3 × 1 cm3 single crystal of InSe, which is a widely studied flexible semiconductor. The average crystal structure of InSe determined from single crystal X-ray diffraction reveals stacking disorder along the c-axis, which can be modeled by a major- (∼75%) and minor component (∼25%). The In-In and In-Se bond lengths are 2.775(3) and 2.632(3) Å, respectively, while the In-In-Se and Se-In-Se angles are 118.5(1) and 99.1(2)°, respectively. The van der Waals interlayer distance was found to be 3.08(3) Å. The easy layer-slippage appears to govern the mechanical flexibility demonstrated macroscopically with a bending test on the single crystal.

AB - Investigations of crystal structures and intrinsic properties of advanced materials require synthesis of high-quality single crystals. In case of incongruently melting solids, specialized growth methods must be applied, but these can be particularly challenging for two-dimensional (2D) van der Waals materials prone to twinning and defects. Here, a very rare synthesis of a large single crystal of an incongruently melting van der Waals material is reported using the traveling solvent floating zone method in an optical mirror furnace. Use of a melt zone with a delicately balanced stoichiometry yielded a ∼3 × 1 cm3 single crystal of InSe, which is a widely studied flexible semiconductor. The average crystal structure of InSe determined from single crystal X-ray diffraction reveals stacking disorder along the c-axis, which can be modeled by a major- (∼75%) and minor component (∼25%). The In-In and In-Se bond lengths are 2.775(3) and 2.632(3) Å, respectively, while the In-In-Se and Se-In-Se angles are 118.5(1) and 99.1(2)°, respectively. The van der Waals interlayer distance was found to be 3.08(3) Å. The easy layer-slippage appears to govern the mechanical flexibility demonstrated macroscopically with a bending test on the single crystal.

UR - http://www.scopus.com/inward/record.url?scp=85201432400&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.4c00520

DO - 10.1021/acs.cgd.4c00520

M3 - Journal article

AN - SCOPUS:85201432400

SN - 1528-7483

VL - 24

SP - 6965

EP - 6971

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 17

ER -

Optical Floating-Zone Furnace Single-Crystal Synthesis of van der Waals Material InSe

Abstract

Access to Document

Other files and links

Fingerprint

Cite this