On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • Interdisciplinary Nanoscience Center
  • Department of Physics and Astronomy
Original languageEnglish
JournalAppl. Phys. A
Volume80
Pages (from-to)1081-1086
Number of pages6
Publication statusPublished - 2005

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ID: 297782