Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • Antonija Grubisic Cabo
  • ,
  • Jill A. Miwa
  • Signe Grønborg Sørensen, Denmark
  • Jonathon M. Riley, Univ St Andrews, University of St Andrews, SUPA, Sch Phys & Astron, Denmark
  • Jens C. Johannsen, École Polytechnique Fédérale de Lausanne, Denmark
  • Cephise Cacho, STFC Rutherford Appleton Lab, STFC Rutherford Appleton Laboratory, Cent Laser Facil
  • ,
  • Oliver Alexander, STFC Rutherford Appleton Lab, STFC Rutherford Appleton Laboratory, Cent Laser Facil, Denmark
  • Richard T. Chapman, STFC Rutherford Appleton Lab, STFC Rutherford Appleton Laboratory, Cent Laser Facil
  • ,
  • Emma Springate, STFC Rutherford Appleton Lab, STFC Rutherford Appleton Laboratory, Cent Laser Facil
  • ,
  • Marco Grioni, École Polytechnique Fédérale de Lausanne
  • ,
  • Jeppe V. Lauritsen
  • Phil D. C. King, Univ St Andrews, University of St Andrews, SUPA, Sch Phys & Astron
  • ,
  • Philip Hofmann
  • Søren Ulstrup

The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasipartide band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

Original languageEnglish
JournalNano Letters
Volume15
Issue9
Pages (from-to)5883-5887
Number of pages5
ISSN1530-6984
DOIs
Publication statusPublished - 2015

    Research areas

  • Transition metal dichalcogenides, MoS2, free carriers, excitons, time- and angle-resolved photoemission spectroscopy, VALLEY POLARIZATION, MONOLAYER MOS2, QUANTUM-WELLS, EXCITONS, HETEROSTRUCTURES, RECOMBINATION, TRANSITION, HELICITY, BANDGAP, GAAS

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