Observation and origin of the Δ manifold in Si:P δ layers

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  • Ann Julie Holt
  • Sanjoy K. Mahatha
  • ,
  • Raluca Maria Stan
  • ,
  • Frode S. Strand, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • Thomas Nyborg, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • Davide Curcio
  • Alex K. Schenk, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • Simon P. Cooil, Norges teknisk-naturvitenskapelige universitet, Trondheim, Aberystwyth University
  • ,
  • Marco Bianchi
  • Justin W. Wells, Norges teknisk-naturvitenskapelige universitet, Trondheim
  • ,
  • Philip Hofmann
  • Jill A. Miwa

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from 4.0nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the Δ manifold is revealed. Moreover, the number of carriers hosted within the Δ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

Original languageEnglish
Article number121402
JournalPhysical Review B
Number of pages5
Publication statusPublished - 2020

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