Novel FinFET Device Using Asymmetric Doping

Farshad Moradi

Novel FinFET Device Using Asymmetric Doping

Research output: Contribution to book/anthology/report/proceeding › Conference abstract in proceedings › Research

Abstract

In this paper, a new technique is proposed to improve the device
characteristics by introducing asymmetric doping at the source and
the drain of the conventional FinFET. Specifically, the proposed
device exhibits 9X increase of the Ion/Ioff ratio and 3X improved DIBL
compared to conventional symmetric FinFET devices. We note a
reduction in sub-threshold swing (SS) of 16% with 7% Ion
degradation. The proposed FinFETs can be utilized in SRAM cells
and logic circuits to improve their functionality at ultra-scaled
technologies.

Translated title of the contribution	Novel FinFET Device Using Asymmetric Doping
Original language	English
Title of host publication	8th European Workshop on Silicon on Insulator Technology, Devices and Circuits : EuroSOI 2012
Publication date	23 Jan 2012
Pages	91-92
Publication status	Published - 23 Jan 2012
Event	Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits - La Grand Motte, France Duration: 23 Jan 2012 → 25 Jan 2012 Conference number: 8

Conference

Conference	Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits
Number	8
Country/Territory	France
City	La Grand Motte
Period	23/01/2012 → 25/01/2012

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Cite this

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abstract = "In this paper, a new technique is proposed to improve the devicecharacteristics by introducing asymmetric doping at the source andthe drain of the conventional FinFET. Specifically, the proposeddevice exhibits 9X increase of the Ion/Ioff ratio and 3X improved DIBLcompared to conventional symmetric FinFET devices. We note areduction in sub-threshold swing (SS) of 16% with 7% Iondegradation. The proposed FinFETs can be utilized in SRAM cellsand logic circuits to improve their functionality at ultra-scaledtechnologies.",

author = "Farshad Moradi",

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N1 - Conference code: 8

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N2 - In this paper, a new technique is proposed to improve the devicecharacteristics by introducing asymmetric doping at the source andthe drain of the conventional FinFET. Specifically, the proposeddevice exhibits 9X increase of the Ion/Ioff ratio and 3X improved DIBLcompared to conventional symmetric FinFET devices. We note areduction in sub-threshold swing (SS) of 16% with 7% Iondegradation. The proposed FinFETs can be utilized in SRAM cellsand logic circuits to improve their functionality at ultra-scaledtechnologies.

AB - In this paper, a new technique is proposed to improve the devicecharacteristics by introducing asymmetric doping at the source andthe drain of the conventional FinFET. Specifically, the proposeddevice exhibits 9X increase of the Ion/Ioff ratio and 3X improved DIBLcompared to conventional symmetric FinFET devices. We note areduction in sub-threshold swing (SS) of 16% with 7% Iondegradation. The proposed FinFETs can be utilized in SRAM cellsand logic circuits to improve their functionality at ultra-scaledtechnologies.

M3 - Conference abstract in proceedings

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EP - 92

BT - 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits

T2 - Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits

Y2 - 23 January 2012 through 25 January 2012

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