Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

Research output: Contribution to book/anthology/report/proceedingArticle in proceedingsResearchpeer-review

  • Shivakumar D. Thammaiah, Aalborg University, University of Twente
  • ,
  • John Lundsgaard Hansen
  • Lis K. Nanver, Aalborg University, University of Twente

Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2019, CSTIC 2019
EditorsQinghuang Lin, Kafai Lai, Cor Claeys, Steve Liang, Peilin Song, Wenjian Yu, Hanming Wu, Xinping Qu, Hsiang-Lan Lung, Ru Huang, Zhen Guo, Ying Zhang
Number of pages3
PublisherIEEE
Publication year2019
Article number8755633
ISBN (Electronic)9781538674437
DOIs
Publication statusPublished - 2019
Event2019 China Semiconductor Technology International Conference, CSTIC 2019 - Shanghai, China
Duration: 18 Mar 201919 Mar 2019

Conference

Conference2019 China Semiconductor Technology International Conference, CSTIC 2019
LandChina
ByShanghai
Periode18/03/201919/03/2019

    Research areas

  • Aluminum, Chemical vapor deposition, Diffusion barrier, Diodes, Gallium nitride, Molecular beam epitaxy, Pure boron

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