Monolayered Graphene Oxide as a Low Contact Resistance Protection Layer in Alkanethiol Solid-State Devices

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  • Martin Kühnel, Københavns Universitet
  • ,
  • Søren V. Petersen
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  • Rune Hviid, Københavns Universitet
  • ,
  • Marc H. Overgaard, Københavns Universitet
  • ,
  • Bo W. Laursen, Københavns Universitet, Nano-Science Center, Department of Chemistry, University of Copenhagen
  • ,
  • Kasper Nørgaard, Københavns Universitet

Vapor deposition of metals has long been the primary method for making contact with organic molecules in electronic devices in a fast and scalable manner. However, direct metal evaporation has proven to be the primary cause of device failure in solid-state molecular devices due to the degradation of the self-assembled molecular monolayers. The introduction of a protective interlayer between the molecular monolayer and the evaporated top electrode greatly improves the yield of working devices but at the cost of an increased internal contact resistance that depends on the nature of the interlayer and its interface with both organic molecules and metal top electrode. In the present work, we investigate the performance of a single layered graphene oxide as an atomically thin interlayer in solid-state molecular devices. We show that a single layered graphene oxide sheet is sufficient to protect an organic monolayer of alkane thiols from metal-induced degradation and short-circuiting. Remarkably, and despite graphene oxide being an insulating material, the contact resistance in our devices with a graphene oxide as a protective interlayer is similar to that of pure metal/molecule/metal junctions. We interpret this observation as graphene oxide effectively becoming part of the top electrode. The graphene oxide monolayer is thus a very promising candidate as a protective interlayer in solid-state molecular devices.

Original languageEnglish
JournalThe Journal of Physical Chemistry Part C
Pages (from-to)9731-9737
Number of pages7
Publication statusPublished - 10 May 2018

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