Modulation the electronic property of 2D monolayer MoS 2 by amino acid

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  • Peng Zhang, Institute of Multidisciplinary Research for Advanced Materials, Jiangsu University
  • ,
  • Zegao Wang, College of Materials Science and Engineering, Sichuan University
  • ,
  • Lei Liu, Institute of Multidisciplinary Research for Advanced Materials, Jiangsu University
  • ,
  • Lasse Hyldgaard Klausen, Stanford University, Stanford, California
  • ,
  • Yin Wang
  • ,
  • Jianli Mi, Institute of Multidisciplinary Research for Advanced Materials, Jiangsu University
  • ,
  • Mingdong Dong

2D molybdenum disulfide (MoS 2 ) has a strong potential for the detection of biomolecules, however, the specific interactions between individual amino acids and MoS 2 surface are still unclear. Herein, the adsorption properties and electronic structures of amino acid/MoS 2 systems were investigated systematically for the 20 standard amino acids based on density functional theory. The adsorption strength of amino acids on MoS 2 monolayer decreases in the following order: TRP > ARG > PHE > TYR > LYS > HIS > PRO > ASN ≈ MET > LEU > ILE > VAL > GLU > GLN > THR > ASP > CYS > SER > ALA > GLY. The band gap of amino acid/MoS 2 system is determined by the energy level of HOMO orbit of the adsorbed amino acid, in which the higher energy level of HOMO orbit will result in a smaller band gap. As proof of concept, optical and electrical detection of the MoS 2 based transistors with and without amino acid molecules (TRP and CYS) were studied. Adsorption of amino acids on a MoS 2 surface allows their chemical information to be transformed into distinct analytically optical and electronic signals, which opens up new possibilities for fabricating novel MoS 2 based highly selective biosensors.

Original languageEnglish
JournalApplied Materials Today
Volume14
IssueMarch
Pages (from-to)151-158
Number of pages8
DOIs
Publication statusPublished - 2019

    Research areas

  • MoS2, Amino acid, Density functional theory, Field effect transistors, FIELD-EFFECT TRANSISTOR, TRANSITION-METAL DICHALCOGENIDES, GRAPHENE, HYSTERESIS, FUNCTIONALIZATION, SENSITIVITY, ADSORPTION, TRANSPORT

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