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Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

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DOI

  • Zegao Wang, University of Electronic Science and Technology of China
  • ,
  • Yuanfu Chen, University of Electronic Science and Technology of China
  • ,
  • Pingjian Li, University of Electronic Science and Technology of China
  • ,
  • Jinhao Zhou, University of Electronic Science and Technology of China
  • ,
  • Jiarui He, University of Electronic Science and Technology of China
  • ,
  • Wanli Zhang, University of Electronic Science and Technology of China
  • ,
  • Zheng Guo
  • Yanrong Li, University of Electronic Science and Technology of China
  • ,
  • Mingdong Dong

Nitrogen-doped graphene (NG) films have been grown on Cu foils by using imidazole (C3H4N2) and PMMA as solid N and C sources. The results show that the pyridinic and pyrrolic nitrogen-bonding configurations and the N doping concentration can be effectively modulated by the hydrogen flux. In addition, it reveals that the defect density of the NG film is dominated by the pyridinic-N configuration instead of the pyrrolic-N configuration from the Raman spectra. Furthermore, from the electrical measurements, it is concluded that the pyrrolic-N configuration has stronger donor ability, and lower carrier scattering than those of pyridinic-N configuration. This study provides fundamental insights to understand the role of various N-bonding configurations, but also give guidance to synthesize the NG with controllable N-bonding configurations.

Original languageEnglish
JournalRSC Advances
Volume6
Issue95
Pages (from-to)92682-92687
Number of pages6
ISSN2046-2069
DOIs
Publication statusPublished - 2016

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