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Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

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  • Jimin Wang, University of Regensburg
  • ,
  • Alexander Kurzendorfer, University of Regensburg
  • ,
  • Lin Chen, University of Regensburg
  • ,
  • Zhiwei Wang, University of Cologne, Beijing Institute of Technology
  • ,
  • Yoichi Ando, University of Cologne
  • ,
  • Yang Xu, Purdue University
  • ,
  • Ireneusz Miotkowski, Purdue University
  • ,
  • Yong P. Chen
  • Dieter Weiss, University of Regensburg

We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility μ and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5-K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with However, at sufficiently high temperature, when the bulk contributes, a third channel with maximum mobility opens. Our data show the feasibility of the method to analyze the different conduction channels in a topological insulator, being also promising for other similar material systems.

Original languageEnglish
Article number253107
JournalApplied Physics Letters
Publication statusPublished - Jun 2021

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