Luminescence decay dynamics of self-assembled germanium islands in silicon

Brian Julsgaard; Peter Balling; John Lundsgaard Hansen; Axel Svane; Arne Nylandsted Larsen

doi:10.1063/1.3559230

Luminescence decay dynamics of self-assembled germanium islands in silicon

Brian Julsgaard, Peter Balling, John Lundsgaard Hansen, Axel Svane, Arne Nylandsted Larsen

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Abstract

The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.

Original language	English
Journal	Applied Physics Letters
Volume	98
Issue	9
Pages (from-to)	093101
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3559230
Publication status	Published - 2011

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title = "Luminescence decay dynamics of self-assembled germanium islands in silicon",

abstract = "The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.",

author = "Brian Julsgaard and Peter Balling and Hansen, {John Lundsgaard} and Axel Svane and {Nylandsted Larsen}, Arne",

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T1 - Luminescence decay dynamics of self-assembled germanium islands in silicon

AU - Julsgaard, Brian

AU - Balling, Peter

AU - Hansen, John Lundsgaard

AU - Svane, Axel

AU - Nylandsted Larsen, Arne

PY - 2011

Y1 - 2011

N2 - The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.

AB - The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.

U2 - 10.1063/1.3559230

DO - 10.1063/1.3559230

M3 - Journal article

SN - 0003-6951

VL - 98

SP - 093101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Luminescence decay dynamics of self-assembled germanium islands in silicon

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