Light emission from silicon with tin-containing nanocrystals

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Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).

Original languageEnglish
Article number077114
JournalR S C Advances
Volume5
Issue7
Number of pages6
ISSN2158-3226
DOIs
Publication statusPublished - Jul 2015

    Research areas

  • MOLECULAR-BEAM EPITAXY, SI, ALLOYS, SN, PHOTOLUMINESCENCE, SI0.95SN0.05

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