Abstract
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).
Original language | English |
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Article number | 077114 |
Journal | R S C Advances |
Volume | 5 |
Issue | 7 |
Number of pages | 6 |
ISSN | 2046-2069 |
DOIs | |
Publication status | Published - Jul 2015 |
Keywords
- MOLECULAR-BEAM EPITAXY
- SI
- ALLOYS
- SN
- PHOTOLUMINESCENCE
- SI0.95SN0.05