Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)

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  • Zhizhuang Liu, Wuhan University of Technology
  • ,
  • Qingfang Xu, Wuhan University of Technology
  • ,
  • Chitengfei Zhang, Wuhan University of Technology
  • ,
  • Qingyun Sun, Wuhan University of Technology
  • ,
  • Chuanbin Wang, Wuhan University of Technology
  • ,
  • Mingdong Dong
  • Zegao Wang
  • ,
  • Hitoshi Ohmori, Institute of Physical and Chemical Research
  • ,
  • Marina Kosinova, RAS - Nikolaev Institute of Inorganic Chemistry, Siberian Branch
  • ,
  • Takashi Goto, Wuhan University of Technology
  • ,
  • Rong Tu, Wuhan University of Technology
  • ,
  • Song Zhang, Wuhan University of Technology

Multilayer graphene on SiC is a promising material due to its compatibility with modern electronics technology. Herein, we demonstrate the growth of large-area (~10 × 5 mm2), high-quality (D/G area ratio: ~0.03) epitaxial graphene on 4H-SiC(0001) using a high-power continuous laser with an extremely fast heating rate of 500 °C/s. As the growth temperature rises from 1550 °C to 1780 °C, the number of graphene layers increases from three to more than ten. The obtained graphene/SiC samples are highly conductive, with a sheet resistance of as low as ~0.43 Ω/sq. The high power and fast heating rate of the laser contribute to the formation of large-area and low-sheet-resistance graphene. The high conductivity makes graphene/SiC a very promising material for applications in conductive films. The growth mechanism of graphene and the influence of the structural properties of graphene on the conductivity are also discussed.

Original languageEnglish
Article number145938
JournalApplied Surface Science
Number of pages8
Publication statusPublished - 2020

    Research areas

  • 4H-SiC, Continuous laser, Epitaxial graphene, Large-area, Sheet resistance

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