Investigating the stability of molecule doped graphene field effect transistors

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  • Zegao Wang, Sichuan University, University of Electronic Science and Technology of China
  • ,
  • Jingbo Liu, Dongguan University of Technology
  • ,
  • Xin Hao, North Laser Research Institute Co. Ltd.
  • ,
  • Yin Wang
  • ,
  • Yuanfu Chen, University of Electronic Science and Technology of China
  • ,
  • Pingjian Li, University of Electronic Science and Technology of China
  • ,
  • Mingdong Dong

Molecular doping has been considered as one of the promising methods to modulate the electrical property of graphene due to its easy operation and no defect generation. However, its stability has not yet been studied. In this study, large area graphene films were synthesized by chemical vapor deposition. The graphene field effect transistors (GFETs) were fabricated by photolithography. The electrical transport measurement demonstrates that the Dirac point of GFETs shifts from +54 V to-22 V after doping the GFETs with a polyethylenimine (PEI) molecule. Further, the influence of the electrical annealing and exposure time to air were systemically studied. The results show that the PEI molecule could be removed under a large measurement current and the electron mobility decreased faster than that of hole mobility under electrical annealing. The study of the PEI doped GFETs exposed to air shows that the oxygen and water firstly interacts with the PEI molecule and then directly interacts with graphene.

Original languageEnglish
JournalNew Journal of Chemistry
Pages (from-to)15275-15279
Number of pages5
Publication statusPublished - Oct 2019

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