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Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Standard

Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. / Shadmani, Atefeh; Thomas, Rodrigo A.; Liu, Zhe et al.
In: Optics Express, Vol. 30, No. 21, 10.2022, p. 37595-37602.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Shadmani, A, Thomas, RA, Liu, Z, Papon, C, Heck, MJR, Volet, N, Scholz, S, Wieck, AD, Ludwig, A, Lodahl, P & Midolo, L 2022, 'Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits', Optics Express, vol. 30, no. 21, pp. 37595-37602. https://doi.org/10.1364/OE.467920

APA

Shadmani, A., Thomas, R. A., Liu, Z., Papon, C., Heck, M. J. R., Volet, N., Scholz, S., Wieck, A. D., Ludwig, A., Lodahl, P., & Midolo, L. (2022). Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. Optics Express, 30(21), 37595-37602. https://doi.org/10.1364/OE.467920

CBE

Shadmani A, Thomas RA, Liu Z, Papon C, Heck MJR, Volet N, Scholz S, Wieck AD, Ludwig A, Lodahl P, et al. 2022. Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. Optics Express. 30(21):37595-37602. https://doi.org/10.1364/OE.467920

MLA

Vancouver

Shadmani A, Thomas RA, Liu Z, Papon C, Heck MJR, Volet N et al. Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. Optics Express. 2022 Oct;30(21):37595-37602. doi: 10.1364/OE.467920

Author

Shadmani, Atefeh ; Thomas, Rodrigo A. ; Liu, Zhe et al. / Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. In: Optics Express. 2022 ; Vol. 30, No. 21. pp. 37595-37602.

Bibtex

@article{890263134af645bb821f1bb3ed48cc15,
title = "Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits",
abstract = "We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.",
author = "Atefeh Shadmani and Thomas, {Rodrigo A.} and Zhe Liu and Camille Papon and Heck, {Martijn J.R.} and Nicolas Volet and Sven Scholz and Wieck, {Andreas D.} and Arne Ludwig and Peter Lodahl and Leonardo Midolo",
note = "Publisher Copyright: {\textcopyright} 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.",
year = "2022",
month = oct,
doi = "10.1364/OE.467920",
language = "English",
volume = "30",
pages = "37595--37602",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "21",

}

RIS

TY - JOUR

T1 - Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits

AU - Shadmani, Atefeh

AU - Thomas, Rodrigo A.

AU - Liu, Zhe

AU - Papon, Camille

AU - Heck, Martijn J.R.

AU - Volet, Nicolas

AU - Scholz, Sven

AU - Wieck, Andreas D.

AU - Ludwig, Arne

AU - Lodahl, Peter

AU - Midolo, Leonardo

N1 - Publisher Copyright: © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

PY - 2022/10

Y1 - 2022/10

N2 - We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.

AB - We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=85139423286&partnerID=8YFLogxK

U2 - 10.1364/OE.467920

DO - 10.1364/OE.467920

M3 - Journal article

C2 - 36258345

AN - SCOPUS:85139423286

VL - 30

SP - 37595

EP - 37602

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 21

ER -