Infrared upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films

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  • Pekka T. Neuvonen, Department of Physics and Astronomy, Aarhus University, Denmark
  • Kristian Sigvardt, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Unknown
  • Sabrina R. Johannsen, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark
  • Jacques Chevallier, Department of Physics and Astronomy, Aarhus University, Denmark
  • Brian Julsgaard
  • Sanjay K. Ram
  • Arne Nylandsted Larsen

Upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films on Si substrate has been demonstrated using 1550 nm cw laser excitation. As-sputtered thin films did not show any upconversion emission, and annealing was required to optically activate the Er3+-ions. Emissions at 985, 809, and 665-675 nm were observed in annealed thin films, corresponding to transitions from 4I1111/, 4I911/, and 4F911/ to the ground state 4I1511/, respectively. The emission from 4I1111/ was the dominant one, whereas emission from 4I911/ was the weakest. The highest intensity at 985 nm was obtained with 2.4 at. % of Er by annealing the film at 700 C. Annealing at higher temperatures causes Er to diffuse and segregate to the Si-ZnO interface between the Si substrate and the ZnO film.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume104
Issue10
ISSN0003-6951
DOIs
Publication statusPublished - 10 Mar 2014

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