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In Situ Resistive Switching Effect Scrutinization on Co-Designed Graphene Sensor

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  • Feng Xiong, National University of Defense Technology
  • ,
  • Zegao Wang, Sichuan University
  • ,
  • Espen Drath Bøjesen
  • Xuya Xiong
  • ,
  • Zhihong Zhu, College of Advanced Interdisciplinary Studies, National University of Defense Technology
  • ,
  • Mingdong Dong

Resistive switching (RS), an electric property based on the forming and rupture of conductive filaments in metal-insulator-metal structures, has attracted intensive attention due to its potential application in next generation energy-efficient and area-efficient memory devices. In situ studies of the RS effect are urgently needed for its mechanism understanding and memristive performance improvement. Here investigations of both the RS effect as well as the gate tunable conductance quantization effect are realized by co-designing an Ag/SiO2 based memory structure on a graphene local sensor. This design enables self-monitoring of the working states of the memristor in real-time by virtue of the graphene sensor. These findings pave the way for further investigations of on-chip electronics and quantum physics.

Original languageEnglish
Article number2007053
Number of pages8
Publication statusPublished - Feb 2021

    Research areas

  • 2D materials, graphene, nano devices, nanoelectronics, sensors

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