In situ Raman spectroscopy of topological insulator BiTe films with varying thickness

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • C. Wang, Tsinghua University
  • ,
  • X. Zhu, Tsinghua University, Denmark
  • Louis Nilsson, Denmark
  • Jing Wen, Tsinghua University
  • ,
  • G. Wang, Tsinghua University, Denmark
  • X. Shan, Tsinghua University
  • ,
  • Q. Zhang, Tsinghua University
  • ,
  • S. Zhang, Peking University
  • ,
  • Jinfeng Jia, Tsinghua University
  • ,
  • Q. Xue, Tsinghua University
Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator BiTe films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV)-MBE-Raman spectroscopy system. When the thickness of BiTe films decreases from 40 quintuple-layers (QL) to 1 QL, the spectral characteristics of some Raman modes appearing in bulk BiTe vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs. [Figure not available: see fulltext.]
Original languageEnglish
JournalNano Research
Volume6
Issue9
Pages (from-to)688-692
Number of pages5
ISSN1998-0124
DOIs
Publication statusPublished - 1 Sep 2013

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