Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho

Jiawei Zhang; Lirong Song; Bo Brummerstedt Iversen

doi:10.1021/acsami.0c22558

Improved Thermoelectric Properties of N-Type Mg₃Sb₂ through Cation-Site Doping with Gd or Ho

Jiawei Zhang, Lirong Song, Bo Brummerstedt Iversen^*

^*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Abstract

The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg3Sb2 thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg3Sb2 thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg3Sb2 samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg3Sb2 samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg3.5Gd0.04Sb2 and Mg3.5Ho0.04Sb2, which are superior to many reported Te-doped Mg3Sb2 without alloying with Mg3Bi2. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg3Sb2 thermoelectric materials.

Original language	English
Journal	ACS applied materials & interfaces
Volume	13
Issue	9
Pages (from-to)	10964–10971
Number of pages	8
ISSN	1944-8244
DOIs	https://doi.org/10.1021/acsami.0c22558
Publication status	Published - Feb 2021

Keywords

Gd
Ho
Mg Sb
effective n-type dopants
thermoelectric
TRANSPORT-PROPERTIES
Mg3Sb
PERFORMANCE
ZINTL COMPOUNDS
INTERNATIONAL ROUND-ROBIN
THERMAL-CONDUCTIVITY
MAGNESIUM
HEAT
DEFECT CHEMISTRY
BULK THERMOELECTRICS
SCATTERING

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10.1021/acsami.0c22558

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title = "Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho",

abstract = "The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg3Sb2 thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg3Sb2 thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg3Sb2 samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg3Sb2 samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg3.5Gd0.04Sb2 and Mg3.5Ho0.04Sb2, which are superior to many reported Te-doped Mg3Sb2 without alloying with Mg3Bi2. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg3Sb2 thermoelectric materials.",

keywords = "Gd, Ho, Mg Sb, effective n-type dopants, thermoelectric, TRANSPORT-PROPERTIES, Mg3Sb, PERFORMANCE, ZINTL COMPOUNDS, INTERNATIONAL ROUND-ROBIN, THERMAL-CONDUCTIVITY, MAGNESIUM, HEAT, DEFECT CHEMISTRY, BULK THERMOELECTRICS, SCATTERING",

author = "Jiawei Zhang and Lirong Song and Iversen, {Bo Brummerstedt}",

year = "2021",

month = feb,

doi = "10.1021/acsami.0c22558",

language = "English",

volume = "13",

pages = "10964–10971",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "9",

}

Improved Thermoelectric Properties of N-Type Mg₃Sb₂ through Cation-Site Doping with Gd or Ho. / Zhang, Jiawei; Song, Lirong; Iversen, Bo Brummerstedt.
In: ACS applied materials & interfaces, Vol. 13, No. 9, 02.2021, p. 10964–10971.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho

AU - Zhang, Jiawei

AU - Song, Lirong

AU - Iversen, Bo Brummerstedt

PY - 2021/2

Y1 - 2021/2

N2 - The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg3Sb2 thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg3Sb2 thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg3Sb2 samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg3Sb2 samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg3.5Gd0.04Sb2 and Mg3.5Ho0.04Sb2, which are superior to many reported Te-doped Mg3Sb2 without alloying with Mg3Bi2. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg3Sb2 thermoelectric materials.

AB - The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg3Sb2 thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg3Sb2 thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg3Sb2 samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg3Sb2 samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg3.5Gd0.04Sb2 and Mg3.5Ho0.04Sb2, which are superior to many reported Te-doped Mg3Sb2 without alloying with Mg3Bi2. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg3Sb2 thermoelectric materials.

KW - Gd

KW - Ho

KW - Mg Sb

KW - effective n-type dopants

KW - thermoelectric

KW - TRANSPORT-PROPERTIES

KW - Mg3Sb

KW - PERFORMANCE

KW - ZINTL COMPOUNDS

KW - INTERNATIONAL ROUND-ROBIN

KW - THERMAL-CONDUCTIVITY

KW - MAGNESIUM

KW - HEAT

KW - DEFECT CHEMISTRY

KW - BULK THERMOELECTRICS

KW - SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85102427844&partnerID=8YFLogxK

U2 - 10.1021/acsami.0c22558

DO - 10.1021/acsami.0c22558

M3 - Journal article

C2 - 33621038

SN - 1944-8244

VL - 13

SP - 10964

EP - 10971

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 9

ER -

Improved Thermoelectric Properties of N-Type Mg₃Sb₂ through Cation-Site Doping with Gd or Ho

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