Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

A comparative study is performed of the properties of SiC films, grown in the presence and absence of a Si1-xGex interfacial layer on top of a Si(111) substrate with x = 0.23. The SiC film growth is carried out at 960 degrees C by carbonization of the substrates with a solid carbon source using molecular beam epitaxy, leading to void formation at the SiC/substrate interface. The film properties have been investigated by transmission electron microscopy, x-ray diffraction, Rutherford backscattering spectrometry, and atomic force microscopy. The results show that the presence of the Si1-xGex layer improves the crystal quality and surface smoothness.

Original languageEnglish
JournalThin Solid Films
Volume662
Pages (from-to)103-109
Number of pages7
ISSN0040-6090
DOIs
Publication statusPublished - 30 Sep 2018

    Research areas

  • SiC, Voids, Molecular beam epitaxy, SiGe interfacial layer, CHEMICAL-VAPOR-DEPOSITION, SILICON-CARBIDE, EPITAXIAL-GROWTH, THIN-FILMS, INTERMEDIATE LAYER, STRAIN RELAXATION, BUFFER LAYERS, SUBSTRATE, GE, SI(111)

See relations at Aarhus University Citationformats

ID: 131857988