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Hysteresis-reversible MoS2transistor
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In: New Journal of Chemistry, Vol. 45, No. 27, 07.2021, p. 12033-12040.
Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
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TY - JOUR
T1 - Hysteresis-reversible MoS2transistor
AU - Cao, Banglin
AU - Wang, Zegao
AU - Xiong, Xuya
AU - Gao, Libin
AU - Li, Jiheng
AU - Dong, Mingdong
N1 - Publisher Copyright: © The Royal Society of Chemistry and the Centre National de la Recherche Scientifique 2021.
PY - 2021/7
Y1 - 2021/7
N2 - An improved understanding of the origin of the electrical transport mechanism is significant to the rational design of a high-performance electronic device. However, the complex interfacial environment and intrinsic defects in atomic-thick two-dimensional MoS2make the electrical transport mechanism unclear. Herein, chemical vapor deposition (CVD)-grown monolayer MoS2transistors are fabricated. The obtained results show that the hysteresis of the as-prepared MoS2transistor is abnormal, exhibiting a different hysteresis dynamic behavior compared with that of the interfacial-trap-state-dominant hysteresis. On the basis of the temperature-resolved electrical measurement as well as Raman and photoluminescence spectroscopies, it is proposed that the abnormal hysteresis behavior is caused by the intrinsic sulfur vacancy, which leads to charge redistribution. Afterin situdecoration with Pt, the hysteresis behavior changes from intrinsic sulfur vacancy dominant to interfacial trap dominant due to the passivation effect, showing a hysteresis-reversible characteristic. The hysteresis width decreases from 22.30 V to 9.12 V, corresponding to the fact that the trap-state density decreases by 0.95 × 1012cm−2. This comprehensive study not only sheds light on the mechanism underlying the electrical transport mechanism, but also offers a strategy to achieve high electrical performance.
AB - An improved understanding of the origin of the electrical transport mechanism is significant to the rational design of a high-performance electronic device. However, the complex interfacial environment and intrinsic defects in atomic-thick two-dimensional MoS2make the electrical transport mechanism unclear. Herein, chemical vapor deposition (CVD)-grown monolayer MoS2transistors are fabricated. The obtained results show that the hysteresis of the as-prepared MoS2transistor is abnormal, exhibiting a different hysteresis dynamic behavior compared with that of the interfacial-trap-state-dominant hysteresis. On the basis of the temperature-resolved electrical measurement as well as Raman and photoluminescence spectroscopies, it is proposed that the abnormal hysteresis behavior is caused by the intrinsic sulfur vacancy, which leads to charge redistribution. Afterin situdecoration with Pt, the hysteresis behavior changes from intrinsic sulfur vacancy dominant to interfacial trap dominant due to the passivation effect, showing a hysteresis-reversible characteristic. The hysteresis width decreases from 22.30 V to 9.12 V, corresponding to the fact that the trap-state density decreases by 0.95 × 1012cm−2. This comprehensive study not only sheds light on the mechanism underlying the electrical transport mechanism, but also offers a strategy to achieve high electrical performance.
UR - http://www.scopus.com/inward/record.url?scp=85110034498&partnerID=8YFLogxK
U2 - 10.1039/d1nj01267c
DO - 10.1039/d1nj01267c
M3 - Journal article
AN - SCOPUS:85110034498
VL - 45
SP - 12033
EP - 12040
JO - New Journal of Chemistry
JF - New Journal of Chemistry
SN - 1144-0546
IS - 27
ER -