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High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

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High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping. / Ulstrup, Søren; Bianchi, Marco; Guan, Dandan; Baraldi, Alessandro; Alfè, Dario; Hornekær, Liv; Hofmann, Philip.

In: Physical Review B, Vol. 86, 2012.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

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@article{bb913f19bff04647bf4b6b2987b4945f,
title = "High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping",
abstract = "The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations.The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainlycaused by fluctuations in the graphene-substrate distance.",
author = "S{\o}ren Ulstrup and Marco Bianchi and Dandan Guan and Alessandro Baraldi and Dario Alf{\`e} and Liv Hornek{\ae}r and Philip Hofmann",
year = "2012",
doi = "10.1103/PhysRevB.86.161402",
language = "English",
volume = "86",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

AU - Ulstrup, Søren

AU - Bianchi, Marco

AU - Guan, Dandan

AU - Baraldi, Alessandro

AU - Alfè, Dario

AU - Hornekær, Liv

AU - Hofmann, Philip

PY - 2012

Y1 - 2012

N2 - The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations.The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainlycaused by fluctuations in the graphene-substrate distance.

AB - The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations.The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainlycaused by fluctuations in the graphene-substrate distance.

U2 - 10.1103/PhysRevB.86.161402

DO - 10.1103/PhysRevB.86.161402

M3 - Journal article

VL - 86

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

ER -