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Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)

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Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). / Ruckhofer, Adrian; Tamtoegl, Anton; Pusterhofer, Michael; Bremholm, Martin; Ernst, Wolfgang E.

In: Journal of Physical Chemistry C, Vol. 123, No. 29, 07.2019, p. 17829-17841.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Harvard

Ruckhofer, A, Tamtoegl, A, Pusterhofer, M, Bremholm, M & Ernst, WE 2019, 'Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)', Journal of Physical Chemistry C, vol. 123, no. 29, pp. 17829-17841. https://doi.org/10.1021/acs.jpcc.9b03450

APA

Ruckhofer, A., Tamtoegl, A., Pusterhofer, M., Bremholm, M., & Ernst, W. E. (2019). Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). Journal of Physical Chemistry C, 123(29), 17829-17841. https://doi.org/10.1021/acs.jpcc.9b03450

CBE

Ruckhofer A, Tamtoegl A, Pusterhofer M, Bremholm M, Ernst WE. 2019. Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). Journal of Physical Chemistry C. 123(29):17829-17841. https://doi.org/10.1021/acs.jpcc.9b03450

MLA

Ruckhofer, Adrian et al. "Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)". Journal of Physical Chemistry C. 2019, 123(29). 17829-17841. https://doi.org/10.1021/acs.jpcc.9b03450

Vancouver

Ruckhofer A, Tamtoegl A, Pusterhofer M, Bremholm M, Ernst WE. Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). Journal of Physical Chemistry C. 2019 Jul;123(29):17829-17841. https://doi.org/10.1021/acs.jpcc.9b03450

Author

Ruckhofer, Adrian ; Tamtoegl, Anton ; Pusterhofer, Michael ; Bremholm, Martin ; Ernst, Wolfgang E. / Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). In: Journal of Physical Chemistry C. 2019 ; Vol. 123, No. 29. pp. 17829-17841.

Bibtex

@article{16a0d8a358a54c4e9a218df4e3dc4718,
title = "Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)",
abstract = "We present a study of the atom surface interaction potential for the He Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom surface interaction potential. Based on quantum mechanical calculations of the He surface scattering intensities and resonance processes, we are then considering the three-dimensional atom surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 +/- 0.05) meV, a stiffness of kappa = (0.58 +/- 0.02) A(-1), and a surface electronic corrugation of (5.8 +/- 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.",
keywords = "SELECTIVE-ADSORPTION RESONANCES, SINGLE DIRAC CONE, TOPOLOGICAL-INSULATOR, INELASTIC-SCATTERING, HE ATOMS, DIFFRACTION, QUANTUM, SB2TE3, LIF",
author = "Adrian Ruckhofer and Anton Tamtoegl and Michael Pusterhofer and Martin Bremholm and Ernst, {Wolfgang E.}",
year = "2019",
month = jul,
doi = "10.1021/acs.jpcc.9b03450",
language = "English",
volume = "123",
pages = "17829--17841",
journal = "The Journal of Physical Chemistry Part C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "29",

}

RIS

TY - JOUR

T1 - Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)

AU - Ruckhofer, Adrian

AU - Tamtoegl, Anton

AU - Pusterhofer, Michael

AU - Bremholm, Martin

AU - Ernst, Wolfgang E.

PY - 2019/7

Y1 - 2019/7

N2 - We present a study of the atom surface interaction potential for the He Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom surface interaction potential. Based on quantum mechanical calculations of the He surface scattering intensities and resonance processes, we are then considering the three-dimensional atom surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 +/- 0.05) meV, a stiffness of kappa = (0.58 +/- 0.02) A(-1), and a surface electronic corrugation of (5.8 +/- 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.

AB - We present a study of the atom surface interaction potential for the He Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom surface interaction potential. Based on quantum mechanical calculations of the He surface scattering intensities and resonance processes, we are then considering the three-dimensional atom surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 +/- 0.05) meV, a stiffness of kappa = (0.58 +/- 0.02) A(-1), and a surface electronic corrugation of (5.8 +/- 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.

KW - SELECTIVE-ADSORPTION RESONANCES

KW - SINGLE DIRAC CONE

KW - TOPOLOGICAL-INSULATOR

KW - INELASTIC-SCATTERING

KW - HE ATOMS

KW - DIFFRACTION

KW - QUANTUM

KW - SB2TE3

KW - LIF

U2 - 10.1021/acs.jpcc.9b03450

DO - 10.1021/acs.jpcc.9b03450

M3 - Journal article

C2 - 31608131

VL - 123

SP - 17829

EP - 17841

JO - The Journal of Physical Chemistry Part C

JF - The Journal of Physical Chemistry Part C

SN - 1932-7447

IS - 29

ER -