Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). / Ruckhofer, Adrian; Tamtoegl, Anton; Pusterhofer, Michael; Bremholm, Martin; Ernst, Wolfgang E.
In: Journal of Physical Chemistry C, Vol. 123, No. 29, 07.2019, p. 17829-17841.Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
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TY - JOUR
T1 - Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)
AU - Ruckhofer, Adrian
AU - Tamtoegl, Anton
AU - Pusterhofer, Michael
AU - Bremholm, Martin
AU - Ernst, Wolfgang E.
PY - 2019/7
Y1 - 2019/7
N2 - We present a study of the atom surface interaction potential for the He Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom surface interaction potential. Based on quantum mechanical calculations of the He surface scattering intensities and resonance processes, we are then considering the three-dimensional atom surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 +/- 0.05) meV, a stiffness of kappa = (0.58 +/- 0.02) A(-1), and a surface electronic corrugation of (5.8 +/- 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.
AB - We present a study of the atom surface interaction potential for the He Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom surface interaction potential. Based on quantum mechanical calculations of the He surface scattering intensities and resonance processes, we are then considering the three-dimensional atom surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 +/- 0.05) meV, a stiffness of kappa = (0.58 +/- 0.02) A(-1), and a surface electronic corrugation of (5.8 +/- 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.
KW - SELECTIVE-ADSORPTION RESONANCES
KW - SINGLE DIRAC CONE
KW - TOPOLOGICAL-INSULATOR
KW - INELASTIC-SCATTERING
KW - HE ATOMS
KW - DIFFRACTION
KW - QUANTUM
KW - SB2TE3
KW - LIF
U2 - 10.1021/acs.jpcc.9b03450
DO - 10.1021/acs.jpcc.9b03450
M3 - Journal article
C2 - 31608131
VL - 123
SP - 17829
EP - 17841
JO - The Journal of Physical Chemistry Part C
JF - The Journal of Physical Chemistry Part C
SN - 1932-7447
IS - 29
ER -