Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111). / Bignardi, Luca; Lizzit, Daniel; Bana, Harsh; Travaglia, Elisabetta; Lacovig, Paolo; Sanders, Charlotte E.; Dendzik, Maciej; Michiardi, Matteo; Bianchi, Marco; Ewert, Moritz; Buß, Lars; Falta, Jens; Flege, Jan Ingo; Baraldi, Alessandro; Larciprete, Rosanna; Hofmann, Philip; Lizzit, Silvano.
In: Physical Review Materials, Vol. 3, No. 1, 014003, 01.2019.Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review
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TY - JOUR
T1 - Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)
AU - Bignardi, Luca
AU - Lizzit, Daniel
AU - Bana, Harsh
AU - Travaglia, Elisabetta
AU - Lacovig, Paolo
AU - Sanders, Charlotte E.
AU - Dendzik, Maciej
AU - Michiardi, Matteo
AU - Bianchi, Marco
AU - Ewert, Moritz
AU - Buß, Lars
AU - Falta, Jens
AU - Flege, Jan Ingo
AU - Baraldi, Alessandro
AU - Larciprete, Rosanna
AU - Hofmann, Philip
AU - Lizzit, Silvano
PY - 2019/1
Y1 - 2019/1
N2 - A singly oriented, single layer of tungsten disulfide (WS2) was epitaxially grown on Au(111) and characterized at the nanoscale by combining photoelectron spectroscopy, photoelectron diffraction, and low-energy electron microscopy. Fast x-ray photoelectron spectroscopy revealed that the growth of a single crystalline orientation is triggered by choosing a low W evaporation rate and performing the process with a high temperature of the substrate. Information about the single orientation of the layer was obtained by acquiring x-ray photoelectron diffraction patterns, revealing a 1H polytype for the WS2 layer and, moreover, determining the structural parameters and registry with the substrate. The distribution, size, and orientation of the WS2 layer were further ascertained by low-energy electron microscopy.
AB - A singly oriented, single layer of tungsten disulfide (WS2) was epitaxially grown on Au(111) and characterized at the nanoscale by combining photoelectron spectroscopy, photoelectron diffraction, and low-energy electron microscopy. Fast x-ray photoelectron spectroscopy revealed that the growth of a single crystalline orientation is triggered by choosing a low W evaporation rate and performing the process with a high temperature of the substrate. Information about the single orientation of the layer was obtained by acquiring x-ray photoelectron diffraction patterns, revealing a 1H polytype for the WS2 layer and, moreover, determining the structural parameters and registry with the substrate. The distribution, size, and orientation of the WS2 layer were further ascertained by low-energy electron microscopy.
UR - http://www.scopus.com/inward/record.url?scp=85060634297&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.3.014003
DO - 10.1103/PhysRevMaterials.3.014003
M3 - Journal article
AN - SCOPUS:85060634297
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2476-0455
IS - 1
M1 - 014003
ER -